# US 9,436,081 B2 · Methods of modifying masking reticles to remove forbidden pitch regions thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,436,081 B2 - Document ID: US9436081B2 - Status: Granted - Kind: B2 - Application number: 14/205,569 - Filed: 2014-03-12 - Published: 2015-09-17 - Granted: 2016-09-06 - Earliest claimed: 2014-03-12 - Assignees: Globalfoundries Inc. - Applicants: GLOBALFOUNDRIES Inc. - Inventors: Jason Eugene Stephens; David Pritchard - Web page: https://patentgrep.com/patent/US9436081B2 ## CPC - G03F 1/72: Repair or correction of mask defects - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) ## Abstract A method is provided, in which a masking reticle including a plurality of pattern blocks is modified, the modifying including: identifying a first pattern block and a second pattern block of the plurality of pattern blocks where at least a first portion of the first pattern block and a second portion of the second pattern block are in parallel relation; and reducing a length of the first portion of the first pattern block when a transverse separation S between corresponding length edges of the first portion of the first pattern block the second portion of the second pattern block falls within a pre-defined forbidden pitch range for the masking reticle. The method may include repeating the identifying and reducing of pairs of pattern blocks on the mask reticle to remove portions of pattern block pairs spaced apart by a transverse separation falling within a forbidden-pitch range. ## Claims ### Claim 1 A method comprising: obtaining a masking reticle comprising a mask pattern, the mask pattern comprising a plurality of pattern blocks, the pattern blocks oriented in a direction of a length axis; modifying the mask pattern to obtain a modified mask pattern by: identifying a first pattern block and a second pattern block of the plurality of pattern blocks where at least a first portion of the first pattern block and a second portion of the second pattern block are in parallel relation in the direction of the length axis; and reducing a length of the first portion of the first pattern block by a length L1 when a transverse separation S between a length edge of the first portion of the first pattern block and a corresponding length edge of the second portion of the second pattern block falls within a pre-defined forbidden pitch range for the masking reticle. ### Claim 2 (depends on 1) The method of claim 1, wherein the reducing results in the first pattern block and the second pattern block no longer having first and second portions thereof in parallel relation in the direction of the length axis. ### Claim 3 (depends on 1) The method of claim 1, wherein modifying the mask pattern further comprises repeating the identifying and the reducing for multiple pairs of pattern blocks of the plurality of pattern blocks. ### Claim 4 (depends on 3) The method of claim 3, wherein the modified mask pattern lacks any pair of pattern blocks of the plurality of pattern blocks with a transverse separation S between a length edge of one pattern block and a corresponding length edge of another pattern block falling within the pre-defined forbidden pitch range for the masking reticle. ### Claim 5 (depends on 1) The method of claim 1, wherein the reducing the length of the first portion of the first pattern block removes the first portion of the first pattern block from the modified mask pattern. ### Claim 6 (depends on 1) The method of claim 1, wherein the reducing further comprises reducing a length of the second portion of the second pattern block by a length L2, wherein reducing the first portion of the first pattern block by length L1 and reducing the second portion of the second pattern block by length L2 results in the first pattern block and the second pattern block no longer having portions thereof in parallel relation in the direction of the length axis. ### Claim 7 (depends on 1) The method of claim 1, wherein the mask pattern is a blocking mask pattern. ### Claim 8 (depends on 1) The method of claim 1, wherein the identifying the first pattern block and the second pattern block comprises using an optical proximity correction process to identify the first pattern block and the second pattern block. ### Claim 9 (depends on 1) The method of claim 1, wherein the reducing the length of the first portion of the first pattern block by the length L1 comprises reducing the first portion of the first pattern block via an optical proximity correction process. ### Claim 10 (depends on 1) The method of claim 1, further comprising providing a design of a circuit structure layer, and wherein modifying the mask pattern results in modifying the design of the circuit structure layer to obtain a modified design of the circuit structure layer. ### Claim 11 (depends on 10) The method of claim 10, wherein the circuit structure layer is a metal layer. ### Claim 12 (depends on 10) The method of claim 10, wherein the design of the circuit structure layer comprises a plurality of parallel designed line segments. ### Claim 13 (depends on 12) The method of claim 12, wherein modifying the design of the circuit structure layer comprises adding at least one dummy line segment to the design of the circuit structure layer, the dummy line segment being parallel to and separate from the plurality of designed line segments. ### Claim 14 (depends on 12) The method of claim 12, wherein modifying the design of the circuit structure layer comprises extending a designed line segment of the plurality of parallel designed line segments with a dummy line extension, the dummy line extension being in contact with the designed line segment. ### Claim 15 (depends on 10) The method of claim 10, further comprising applying the modified mask pattern to a lithographic process, the lithographic process facilitating, at least in part, providing a circuit structure design reticle. ### Claim 16 (depends on 15) The method of claim 15, wherein the lithographic process comprises a double-patterning process. ### Claim 17 (depends on 16) The method of claim 16, wherein the double-patterning process is a self-aligning double-patterning process. ### Claim 18 (depends on 15) The method of claim 15, wherein applying the modified mask pattern to the lithographic process comprises overlaying the masking reticle comprising the modified mask pattern with the circuit structure design reticle. ### Claim 19 (depends on 18) The method of claim 18, wherein applying the modified mask pattern to the lithographic process results in obtaining a printed circuit structure layer comprising a plurality of active line segments and at least one inactive line segment. ### Claim 20 (depends on 19) The method of claim 19, wherein the circuit structure layer is one circuit structure layer of a plurality of circuit structure layers, and the at least one inactive line segment lacks electrical connectivity to the others of the plurality of circuit structure layers.