# US 9,435,054 B1 · Precision cut high energy crystals

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- Number: US 9,435,054 B1
- Document ID: US9435054B1
- Status: Granted
- Kind: B1
- Application number: 14/638,726
- Filed: 2015-03-04
- Granted: 2016-09-06
- Earliest claimed: 2013-09-27
- Assignees: Torus Tech LLC
- Applicants: Nassim Haramein
- Inventors: Nassim Haramein
- Web page: https://patentgrep.com/patent/US9435054B1

## CPC

- C30B 29/18: Quartz
- C30B 33/00: After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence)
- C30B 33/06: Joining of crystals
- H10N 30/853: Ceramic compositions
- Y10T 428/29: Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Crystals having a modified regular tetrahedron shape are provided. Crystals preferably have four substantially identical triangular faces that define four truncated vertices and six chamfered edges. The six chamfered edges can have an average length of l, and an average width of w, and 8≦l/w≦9.5.

## Claims

### Claim 1

A crystal having a modified regular tetrahedral shape, comprising:
a crystalline composition comprising a synthetic quartz;
four substantially identical triangular faces configured to define four truncated vertices and six chamfered edges;
wherein the six chamfered edges have an average length of l, and an average width of w; and
8≦l/w≦9.5.

### Claim 2 (depends on 1)

The crystal of claim 1 wherein the composition essentially consists of the synthetic quartz.

### Claim 3 (depends on 1)

The crystal of claim 1 wherein each of the faces has a surface roughness≦10 Angstroms RMS.

### Claim 4 (depends on 1)

The crystal of claim 1 wherein the lengths of each of the six edges differ by no more than 1%.

### Claim 5 (depends on 1)

The crystal of claim 1 wherein the width of each of the six edges differ by no more than 1%.

### Claim 6 (depends on 4)

The crystal of claim 4, wherein the width of each of the six edges differ by no more than 1%.

### Claim 7 (depends on 1)

The crystal of claim 1 wherein 8.3≦l/w≦9.2.

### Claim 8 (depends on 1)

The crystal of claim 1 wherein 8.7≦l/w≦8.8.

### Claim 9 (depends on 1)

The crystal of claim 1, wherein each of the four truncated vertices are parallel to at least one of the four substantially identical triangular faces.

### Claim 10 (depends on 1)

The crystal of claim 1, wherein each of the four truncated vertices comprises three sides y, and wherein 1.3≦y/w≦1.7.

### Claim 11 (depends on 10)

The crystal of claim 10, wherein 1.4≦y/w≦1.5.

### Claim 12 (depends on 10)

The crystal of claim 10, wherein each of the four truncated vertices comprises three sides z, and wherein 0.8≦z/w≦1.2.

### Claim 13 (depends on 12)

The crystal of claim 12, wherein z/w is 1±2%.