# US 9,435,052 B2 · Arrangement for manufacturing crystalline silicon ingots > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,435,052 B2 - Document ID: US9435052B2 - Status: Granted - Kind: B2 - Application number: 14/112,858 - Filed: 2012-04-18 - Published: 2014-05-08 - Granted: 2016-09-06 - Earliest claimed: 2011-04-19 - Assignees: Rec Solar Pte. Ltd. - Applicants: Egor Vladimirov; Alexandre Teixeira; Kai Johansen; Pouria Homayonifar - Inventors: Egor Vladimirov; Alexandre Teixeira; Kai Johansen; Pouria Homayonifar - Web page: https://patentgrep.com/patent/US9435052B2 ## CPC - C30B 11/00: Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method (C30B13/00, C30B15/00, C30B17/00, C30B19/00 take precedence; under a protective fluid C30B27/00) - C30B 11/003: {Heating or cooling of the melt or the crystallised material} - C30B 29/06: Silicon - Y10T 117/1092: Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger] - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace. ## Claims ### Claim 1 An arrangement for manufacturing crystalline silicon ingots by directional solidification, the arrangement comprising: at least one compartment with heat insulating side wall(s) configured to house a crucible, the at least one compartment comprising: a heating device; at least one inlet for supplying purge gas into the compartment; one or more outlet(s) for extracting gas from the compartment; a gas conduit formed by a continuous peripheral opening between: an upper shield element placed at a distance above the crucible and which covers the horizontal cross-section area of the compartment to separate it in two overlaid sub-compartments where the upper sub-compartment has heating means, and a lower shield element placed at a distance below the upper shield element and along the outer surface of the crucible, and which covers the cross-section area formed between the outer surface of the crucible and the inner surface of the side heat insulating wall(s) of the compartment; and a flow constriction located in the gas conduit or the one or more outlet(s), providing a cross-section area, A, in the gas conduit or one or more outlet(s), equal to A=P·d, where P is a perimeter length of an upper edge of the crucible in mm and d is between 0.5 and 50 mm, wherein the one or more inlet(s) for supplying purge gas is (are) located above the crucible, and located on the heat insulating side wall(s) of the compartment between the upper and lower shield elements. ### Claim 2 (depends on 1) Arrangement according to claim 1, wherein d is between 2 and 10 mm. ### Claim 3 (depends on 1) Arrangement according to claim 1, wherein the upper shield element is made of one plate or sheet forming a substantially horizontally oriented partition wall or ceiling, and the lower shield element is made of one plate or sheet element forming a substantially horizontally oriented partition wall or platform projecting from the outer surface of the crucible wall along the entire periphery of the crucible and thus separating the inner space of the compartment into two over-laid sub-compartments along the periphery of the compartment. ### Claim 4 (depends on 3) Arrangement according to claim 3, wherein the lower and upper shield elements are each made of one rigid plate or a flexible sheet of a material able to withstand the temperatures and chemical environment found in silicon crystallisation furnaces formed by one continuous structural element, or they are made of more than one rigid plate or flexible sheet elements which together covers the intended cross-sectional area of the inner space of the compartment. ### Claim 5 (depends on 4) Arrangement according to claim 4, wherein the sheets are made of one of the following materials: carbon fibre-reinforced silicon carbide such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon with or without a SiC-coating, or graphite coated or uncoated with SiC. ### Claim 6 (depends on 5) Arrangement according to claim 5, wherein the sheets are carbon fibre-reinforced carbon coated with SiC, wherein the thickness of the carbon fibre-reinforced carbon sheets is in the range of 1-10 mm, and the thickness of the SiC-coating is in the range of 10-200 μm. ### Claim 7 (depends on 6) Arrangement according to claim 6, wherein a thickness of the carbon fibre-reinforced carbon sheets is in a range of 2-8 mm, and a thickness of the SiC-coating is in a range of 20-150 μm. ### Claim 8 (depends on 3) Arrangement according to claim 3, wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 9 (depends on 3) Arrangement according to claim 3, wherein the flow constriction is formed by the gap or distance between the upper edge of a circumferential side support and the and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm, and where the lower shield element is placed along the outer surface of the circumferential side support and covers the cross-section area formed between the outer surface of the circumferential side support and the inner surface of the side heat insulating wall(s) of the compartment. ### Claim 10 (depends on 3) Arrangement according to claim 3, wherein the flow constriction is formed by applying a circumferential hood attached to and extending downward from the upper shield element to a distance above the lower shield element forming a continuous slot along the periphery of the circumferential hood at a distance from the crucible wall, and where the slot has a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 11 (depends on 3) Arrangement according to claim 3, wherein the flow constriction is formed by the gas outlet by having a gas outlet with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 12 (depends on 9) Arrangement according to claim 9, wherein the circumferential side support is made of plate elements of one of the following materials: carbon fibre-reinforced silicon carbide ceramics such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon CFRC with or without a SiC-coating, or graphite coated or uncoated with SiC, or a combination thereof. ### Claim 13 (depends on 1) Arrangement according to claim 1, wherein the protection of the surface of the heat insulating wall between the upper and lower shield element is obtained by covering the surface with a material which is able to withstand the heat and chemical environment in the compartment. ### Claim 14 (depends on 13) Arrangement according to claim 13, wherein the covering material is plate elements of one of the following materials: carbon fibre-reinforced silicon carbide ceramics such as C—C/SiC or C/SiC-composites, silicon carbide fibre composite SiC/SiC, carbon fibre-reinforced carbon CFRC with or without a SiC-coating, or graphite coated or uncoated with SiC, or a combination thereof. ### Claim 15 (depends on 13) Arrangement according to claim 13, wherein the covering material is of the same material and made an integral part of the upper and lower shield element, respectively. ### Claim 16 (depends on 3) Arrangement according to claim 3, wherein the arrangement also comprises a condensation trap placed at the outlet for extracting gas from the compartment in the form of a cold mesh or grid made of metal. ### Claim 17 (depends on 2) Arrangement according to claim 2, wherein the upper shield element is made of one plate or sheet forming a substantially horizontally oriented partition wall or ceiling, and the lower shield element is made of one plate or sheet element forming a substantially horizontally oriented partition wall or platform projecting from the outer surface of the crucible wall along the entire periphery of the crucible and thus separating the inner space of the compartment into two over-laid sub-compartments along the periphery of the compartment. ### Claim 18 (depends on 4) Arrangement according to claim 4, wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 19 (depends on 5) Arrangement according to claim 5, wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 20 (depends on 6) Arrangement according to claim 6, wherein the flow constriction is formed by the gap or distance between the upper edge of the crucible and the upper shield element of the gas guide forming a continuous slot between them with a cross-sectional area, A, of A=P·d, where P is the perimeter length of the upper edge of the crucible in mm and d is between 2 and 50 mm. ### Claim 21 (depends on 1) Arrangement according to claim 1, wherein d is between 4 and 6 mm. ### Claim 22 (depends on 6) Arrangement according to claim 6, wherein the thickness of the carbon fiber-reinforced carbon sheets is in the range of 2-5 mm, and the thickness of the SiC-coating is in the range of 40-120 μm. ### Claim 23 (depends on 6) Arrangement according to claim 6, wherein the thickness of the carbon fiber-reinforced carbon sheets is in the range of 2-3 mm, and the thickness of the SiC-coating is in the range of 60-100 μm.