# US 9,435,024 B2 · Target for magnetron sputtering > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,435,024 B2 - Document ID: US9435024B2 - Status: Granted - Kind: B2 - Application number: 14/677,013 - Filed: 2015-04-02 - Published: 2015-07-30 - Granted: 2016-09-06 - Earliest claimed: 2012-10-05 - Assignees: Tanaka Kikinzoku Kogyo K.K. - Applicants: Tanaka Kikinzoku Kogyo K.K. - Inventors: Yasuyuki Goto; Yasunobu Watanabe; Yusuke Kobayashi - Web page: https://patentgrep.com/patent/US9435024B2 ## CPC - C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy} - B22F 3/14: simultaneously - B22F 3/15: Hot isostatic pressing - B22F 5/00: Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product - C22C 5/04: Alloys based on a platinum group metal - C22C 19/07: based on cobalt - C23C 14/35: by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} - G11B 5/851: Coating a support with a magnetic layer by sputtering - H01J 37/3429: {Plural materials} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - C22C: ALLOYS (treatment of alloys C21D, C22F) - G11B: INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER (recording measured values in a way that does not require playback through a transducer G01D9/00; recording or playback apparatus using mechanically marked tape, e.g. punched paper tape, or using unit records, e.g. punched or magnetically marked cards G06K; transferring data from one type of record carrier to another G06K1/18; circuits for coupling output of reproducer to radio receiver H04B1/20; gramophone pick-ups or like acoustic electromechanical transducers or circuits therefor H04R) - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) ## Abstract A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co, wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less, and wherein the non-magnetic metal phase and the oxide are mutually dispersed. ## Claims ### Claim 1 A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being more than 0 at % and less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and less than 100 at % and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co; wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less; wherein the non-magnetic metal phase and the oxide are mutually dispersed to form a matrix phase, and wherein the magnetic metal phase is dispersed in the matrix phase. ### Claim 2 A target for magnetron sputtering, comprising metal Co, metal Cr, metal Pt, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being more than 0 at % and less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co, metal Cr, and metal Pt with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and less than 100 at % and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co; wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less; wherein the non-magnetic metal phase and the oxide are mutually dispersed to form a matrix; and wherein the magnetic metal phase is dispersed in the matrix phase. ### Claim 3 (depends on 1) The target for magnetron sputtering according to claim 1, wherein a volume ratio of a magnetic metal phase having an aspect ratio of 2 or more among the magnetic metal phase is 0.5 or less to the total magnetic metal phase. ### Claim 4 (depends on 2) The target for magnetron sputtering according to claim 2, wherein a volume ratio of a magnetic metal phase having an aspect ratio of 2 or more among the magnetic metal phase is 0.5 or less to the total magnetic metal phase. ### Claim 5 (depends on 1) The target for magnetron sputtering according to claim 1, wherein the non-magnetic metal phase has the atomic ratio of the metal Cr to the total of the metal Co and the metal Cr contained being 30 at % or more and less than 100 at %. ### Claim 6 (depends on 2) The target for magnetron sputtering according to claim 2, wherein the non-magnetic metal phase has the atomic ratio of the metal Cr to the total of the metal Co and the metal Cr contained being 30 at % or more and less than 100 at %. ### Claim 7 (depends on 1) The target for magnetron sputtering according to claim 1, wherein the magnetic metal phase comprises the metal Co and metal Cr with the balance being unavoidable impurities, and has an atomic ratio of the metal Co to the total of the metal Co and the metal Cr being 85% or more and less than 100 at %. ### Claim 8 (depends on 2) The target for magnetron sputtering according to claim 2, wherein the magnetic metal phase comprises the metal Co and metal Cr with the balance being unavoidable impurities, and has an atomic ratio of the metal Co to the total of the metal Co and the metal Cr being 85% or more and less than 100 at %. ### Claim 9 (depends on 1) The target for magnetron sputtering according to claim 1, wherein the magnetic metal phase consists of the metal Co and unavoidable impurities. ### Claim 10 (depends on 2) The target for magnetron sputtering according to claim 2, wherein the magnetic metal phase consists of the metal Co and unavoidable impurities. ### Claim 11 (depends on 1) The target for magnetron sputtering according to claim 1, wherein the oxide contains at least one of SiO2, TiO2, Ti2O3, Ta2O5, Cr2O3, CoO, Co3O4, B2O3, Fe2O3, CuO, Y2O3, MgO, Al2O3, ZrO2, Nb2O5, MoO0, CeO2, Sm2O3, Gd2O3, WO2, WO3, HfO2, and NiO2. ### Claim 12 (depends on 2) The target for magnetron sputtering according to claim 2, wherein the oxide contains at least one of SiO2, TiO2, Ti2O3, Ta2O5, Cr2O3, CoO, Co3O4, B2O3, Fe2O3, CuO, Y2O3, MgO, Al2O3, ZrO2, Nb2O5, MoO3, CeO2, Sm2O3, Gd2O3, WO2, WO3, HfO2, and NiO2. ### Claim 13 (depends on 1) The target for magnetron sputtering according to claim 1, wherein the target can be used for forming a magnetic recording layer. ### Claim 14 (depends on 2) The target for magnetron sputtering according to claim 2, wherein the target can be used for forming a magnetic recording layer.