# US 9,435,023 B2 · Method for producing Cu-Ga alloy powder, Cu-Ga alloy powder, method for producing Cu-Ga alloy sputtering target, and Cu-Ga alloy sputtering target

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- Number: US 9,435,023 B2
- Document ID: US9435023B2
- Status: Granted
- Kind: B2
- Application number: 13/639,090
- Filed: 2011-04-07
- Published: 2013-08-01
- Granted: 2016-09-06
- Earliest claimed: 2010-04-09
- Assignees: Sumitomo Metal Mining Co., Ltd.
- Applicants: Toshio Morimoto; Tatsuya Takahashi; Isao Ando; Tetsufumi Komukai; Masanori Takagi; Eriko Sato; Hirotaka Minami
- Inventors: Toshio Morimoto; Tatsuya Takahashi; Isao Ando; Tetsufumi Komukai; Masanori Takagi; Eriko Sato; Hirotaka Minami
- Web page: https://patentgrep.com/patent/US9435023B2

## CPC

- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- B22F 1/00: Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F 3/14: simultaneously
- C22C 1/0425: {Copper-based alloys}
- C22C 9/00: Alloys based on copper
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

Provided are a method for producing a Cu—Ga alloy powder, by which a high quality Cu—Ga alloy powder to be produced readily; a Cu—Ga alloy powder; a method for producing a Cu—Ga alloy sputtering target; and a Cu—Ga alloy sputtering target. Specifically, a Cu—Ga alloy powder is produced by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying. Also a Cu—Ga alloy sputtering target is produced by molding the Cu—Ga alloy powder followed by sintering.

## Claims

### Claim 1

A method for producing a Cu—Ga alloy powder comprising stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying, wherein a mean particle size of the Cu powder is 1 to 300 μm.

### Claim 2 (depends on 1)

The method for producing a Cu—Ga alloy powder according to claim 1, wherein the mixed powder is stirred at a temperature of 30° C. or higher and below 400° C. in an inert atmosphere and a Cu—Ga binary alloy layer is formed on the surface of the Cu powder.

### Claim 3 (depends on 1)

The method for producing a Cu—Ga alloy powder according to claim 1, wherein the mixed powder is stirred at a temperature of 400° C. or higher and 700° C. or lower in an inert atmosphere and a Cu—Ga binary alloy is formed inside of the Cu powder.

### Claim 4 (depends on 1)

The method for producing a Cu—Ga alloy powder according to claim 1, wherein the mixed powder is stirred at a temperature of 30° C. or higher and below 400° C. in an inert atmosphere thereby accomplishing alloying and the resultant alloyed powder is subjected to a heat treatment at a temperature of 400° C. or higher and 700° C. or lower in an inert atmosphere.

### Claim 5

A method for producing a Cu—Ga alloy sputtering target, the method comprising:
a preparation step for preparing a Cu—Ga alloy powder by stirring a mixed powder containing a Cu powder and a Ga in a mass ratio of 85:15 to 55:45 at a temperature of 30 to 700° C. in an inert atmosphere thereby accomplishing alloying; and
a sintering step for molding the Cu—Ga alloy powder followed by sintering, wherein a mean particle size of the Cu powder is 1 to 300 μm.

### Claim 6 (depends on 5)

The method for producing a Cu—Ga alloy sputtering target according to claim 5, wherein the sintering step employs a hot press method.