# US 9,434,878 B2 · Phosphor, preparing method for phosphor, and light emitting device

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- Number: US 9,434,878 B2
- Document ID: US9434878B2
- Status: Granted
- Kind: B2
- Application number: 14/521,530
- Filed: 2014-10-23
- Published: 2015-07-02
- Granted: 2016-09-06
- Earliest claimed: 2013-12-26
- Assignees: Chi Mei Corporation
- Applicants: Chi Mei Corporation
- Inventors: Yao-Tsung Chuang; Jen-Shrong Uen
- Web page: https://patentgrep.com/patent/US9434878B2

## CPC

- C09K 11/7774: {Aluminates}
- H10H 20/8512: {Wavelength conversion materials}
- H10W 72/01515: {Forming coatings}
- H10W 72/075: {of bond wires}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W 90/756: {between a chip and a stacked lead frame, conducting package substrate or heat sink}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A phosphor, a preparing method for the phosphor, and a light emitting device are provided. The phosphor has a formula of A3−xCexQ5O12. A and Q are independently comprise Al, Ga, In, Sc, Y, La, Gd, Tb, Lu elements or combinations thereof. Ce represents a cerium element. O represents an oxygen element. 0<x≦3. The phosphor contains 100 ppm˜2000 ppm of Ba element.

## Claims

### Claim 1

A phosphor, comprising a formula of A3−xCexQ5O12, wherein the A and the Q independently comprise aluminum (Al), gallium (Ga), indium (In), scandium (Sc), yttrium (Y), lanthanun (La), gadolinium (Gd), terbium (Tb), lutetium (Lu), or a combination thereof, Ce is cerium, O is oxygen, 0<x≦3, and the phosphor contains 100 ppm˜2000 ppm of barium (Ba).

### Claim 2 (depends on 1)

The phosphor according to claim 1, wherein the phosphor contains 200 ppm˜800 ppm of silicon (Si).

### Claim 3 (depends on 1)

The phosphor according to claim 1, wherein the phosphor contains 200 ppm˜1800 ppm of Ba.

### Claim 4 (depends on 1)

The phosphor according to claim 1, wherein the phosphor contains 300 ppm˜700 ppm of Si.

### Claim 5 (depends on 1)

The phosphor according to claim 1, wherein A comprises at least one of elements Y, Gd, Tb and Lu.

### Claim 6 (depends on 1)

The phosphor according to claim 1, wherein Q comprises at least one of elements Al, Ga, In and Sc.

### Claim 7 (depends on 1)

The phosphor according to claim 1, wherein 1≧x≧0.025.

### Claim 8 (depends on 1)

The phosphor according to claim 1, wherein Q is AlyGa1−y, and 1≧y≧0.4.

### Claim 9 (depends on 1)

A light emitting device, comprising:
a semiconductor light emitting element; and
the phosphor according to claim 1, wherein the phosphor is excited by a light emitted from the semiconductor light emitting element and converts the light emitted from the semiconductor light emitting element to emit a light having a wavelength different from a wavelength of light emitted from the semiconductor light emitting element.

### Claim 10 (depends on 1)

A preparing method for a phosphor according to claim 1, comprising:
sintering a raw material mixture to obtain a sintered phosphor material, mixing the sintered phosphor material with an alkali metal silicate aqueous solution to obtain a phosphor mixture, and then a subsequent treating process performing to the phosphor mixture to obtain the phosphor, wherein the subsequent treating process comprises a water-washing step.

### Claim 11

A phosphor, comprising a formula of A3−xCexQ5O12, wherein the A and the Q independently comprise aluminum (Al), gallium (Ga), indium (In), scandium (Sc), yttrium (Y), lanthanun (La), gadolinium (Gd), terbium (Tb), lutetium (Lu), or a combination thereof, Ce is cerium, O is oxygen, 0<x≦3, and the phosphor contains 200 ppm˜800 ppm of Si.

### Claim 12 (depends on 11)

The phosphor according to claim 11, wherein the phosphor contains 300 ppm˜700 ppm of Si.

### Claim 13 (depends on 11)

The phosphor according to claim 11, wherein A comprises at least one of elements Y, Gd, Tb and Lu.

### Claim 14 (depends on 11)

The phosphor according to claim 11, wherein Q comprises at least one of elements Al, Ga, In and Sc.

### Claim 15 (depends on 11)

The phosphor according to claim 11, wherein 1≧x≧0.025.

### Claim 16 (depends on 11)

The phosphor according to claim 11, wherein Q is AlyGa1−y, and 1≧y≧0.4.

### Claim 17 (depends on 11)

A preparing method for a phosphor according to claim 11, comprising:
sintering a raw material mixture to obtain a sintered phosphor material, mixing the sintered phosphor material with an alkali metal silicate aqueous solution to obtain a phosphor mixture, and then a subsequent treating process performing to the phosphor mixture to obtain the phosphor, wherein the subsequent treating process comprises a water-washing step.