# US 9,434,859 B2 · Chemical-mechanical planarization of polymer films > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 9,434,859 B2 - Document ID: US9434859B2 - Status: Granted - Kind: B2 - Application number: 14/035,037 - Filed: 2013-09-24 - Published: 2015-03-26 - Granted: 2016-09-06 - Earliest claimed: 2013-09-24 - Assignees: Cabot Microelectronics Corporation - Applicants: Cabot Microelectronics Corporation - Inventors: Sudeep Pallikkara Kuttiatoor; Renhe Jia; Jeffrey Dysard - Web page: https://patentgrep.com/patent/US9434859B2 ## CPC - C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} - C09D 5/00: Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced {(electrically insulating plastics, resins or waxes H01B3/30)}; Filling pastes - C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) ## Abstract The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate with the chemical-mechanical polishing composition. The polishing composition comprises (a) abrasive particles that comprise ceria, zirconia, silica, alumina, or a combination thereof, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, an amino acid, or a hydroxy-substituted N-heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 1 to about 4. ## Claims ### Claim 1 A chemical-mechanical polishing composition comprising: (a) abrasive particles that comprise ceria, (b) a metal ion that is a Lewis Acid, (c) a ligand that is an aromatic carboxylic acid, an aromatic sulfonic acid, an aromatic acid amide, or a hydroxy-substituted N heterocycle, and (d) an aqueous carrier, wherein the pH of the chemical-mechanical polishing composition is in the range of about 2 to about 3 and wherein the molar concentration ratio of the metal ion to the ligand is about 1:about 2. ### Claim 2 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the abrasive particles consist of ceria, and the chemical-mechanical polishing composition does not comprise other abrasive particles. ### Claim 3 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the metal ion is Fe3+, Al3+, Cu2+, Zn2+, or a combination thereof. ### Claim 4 (depends on 3) The chemical-mechanical polishing composition of claim 3, wherein the metal ion is Fe3+. ### Claim 5 (depends on 3) The chemical-mechanical polishing composition of claim 3, wherein the metal ion is Al3+. ### Claim 6 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the ligand is picolinic acid, isonicotinic acid, nicotinic acid, pyridinedicarboxylic acid, pyridine sulfonic acid, p-toluenesulfonic acid, salicylamide, aniline sulfonic acid, phenylglycine, aminobenzoic acid, pipecolinic acid, 2 hydroxypyridine, 8 hydroxyquinoline, 2-hydroxyquinoline, or a combination thereof. ### Claim 7 (depends on 6) The chemical-mechanical polishing composition of claim 6, wherein the ligand is picolinic acid. ### Claim 8 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the chemical-mechanical polishing composition does not contain a peroxy-type oxidizer. ### Claim 9 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the chemical-mechanical polishing composition comprises abrasive particles at a total concentration of about 0.01 wt. % to about 1 wt. %. ### Claim 10 (depends on 9) The chemical-mechanical polishing composition of claim 9, wherein the chemical-mechanical polishing composition comprises abrasive particles at a total concentration of about 0.01 wt. % to about 0.05 wt. %. ### Claim 11 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the chemical-mechanical polishing composition comprises one or more metal ions that are Lewis Acids at a total concentration of about 0.05 mM to about 50 mM. ### Claim 12 (depends on 1) The chemical-mechanical polishing composition of claim 1, wherein the chemical-mechanical polishing composition comprises one or more ligands that are aromatic carboxylic acids, aromatic sulfonic acids, aromatic acid amides, or hydroxy-substituted N heterocycles at a total concentration of about 0.1 mM to about 100 mM. ### Claim 13 (depends on 1) A method of polishing a substrate comprising: (i) providing a substrate; (ii) providing a polishing pad; (iii) providing the chemical-mechanical polishing composition of claim 1; (iv) contacting the substrate with the polishing pad and the chemical-mechanical polishing composition; and (v) moving the polishing pad and the chemical-mechanical polishing composition relative to the substrate to abrade at least a portion of the substrate to polish the substrate.