# US 9,434,609 B2 · Method for forming pattern, and polysiloxane composition

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- Number: US 9,434,609 B2
- Document ID: US9434609B2
- Status: Granted
- Kind: B2
- Application number: 13/629,908
- Filed: 2012-09-28
- Published: 2015-02-19
- Granted: 2016-09-06
- Earliest claimed: 2011-09-29
- Assignees: Jsr Corporation
- Applicants: Jsr Corporation
- Inventors: Satoshi Dei; Takashi Mori; Kazunori Takanashi
- Web page: https://patentgrep.com/patent/US9434609B2

## CPC

- B81C 1/00396: {Mask characterised by its composition, e.g. multilayer masks}
- B81C 1/00388: {Etch mask forming}
- C08G 77/14: containing silicon bound to oxygen-containing groups
- C08G 77/24: halogen-containing groups
- C08G 77/388: containing nitrogen
- C09D 183/08: containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
- G03F 7/0046: {with perfluoro compounds, e.g. for dry lithography (G03F7/0048 takes precedence)}
- G03F 7/0752: {in non photosensitive layers or as additives, e.g. for dry lithography}
- G03F 7/0757: {Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)}
- G03F 7/094: {Multilayer resist systems, e.g. planarising layers}
- G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)}
- H05K 3/061: {Etching masks}
- B81C 2201/0198: for making a masking layer
- H05K 2203/05: Patterning and lithography; Masks; Details of resist
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS

## Abstract

A pattern-forming method in which processibility of a silicon-containing film in etching with a fluorine gas and resistance against etching with an oxygen gas can be together improved in a multilayer resist process to form a finer pattern. Provided is a pattern-forming method that includes the steps of (1) providing a silicon-containing film on the upper face side of a substrate to be processed using a polysiloxane composition; (2) forming a resist pattern on the silicon-containing film; (3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and (4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern, in which the polysiloxane composition includes (A) a polysiloxane containing a fluorine atom, and (B) a crosslinking accelerator.

## Claims

### Claim 1

A pattern-forming method comprising:
(1) providing a silicon-containing film on an upper face side of a substrate to be processed using a polysiloxane composition;
(2) forming a resist pattern on the silicon-containing film;
(3) dry-etching the silicon-containing film using the resist pattern as a mask to form a silicon-containing pattern; and
(4) dry-etching the substrate to be processed using the silicon-containing pattern as a mask to form a pattern,
wherein the polysiloxane composition comprises:
(A) a polysiloxane comprising a fluorine atom;
(B) a crosslinking accelerator; and
(C) water,
wherein the polysiloxane (A) comprises a fluorinated hydrocarbon group which may be substituted, and the fluorinated hydrocarbon group which may be substituted is a fluorinated alkyl group, a fluorinated alicyclic hydrocarbon group, a pentafluorophenyl group, a fluorinated aryl group other than a fluorinated phenyl group, or a fluorinated aralkyl group, and
wherein the crosslinking accelerator (B) is a nitrogen-containing compound which generates a compound having a basic amino group by heating.

### Claim 2 (depends on 1)

The pattern-forming method according to claim 1, wherein the step (2) further comprises:
(2-A1) providing a resist film on the silicon-containing film using a resist composition;
(2-A2) exposing the resist film by irradiation with an exposure light through a photomask; and
(2-A3) developing the exposed resist film.

### Claim 3 (depends on 1)

The pattern-forming method according to claim 1, further comprising:
(0) providing a resist underlayer film that is an organic film on the substrate to be processed, wherein
the silicon-containing film is provided on the resist underlayer film in the step (1), and
the resist underlayer film is further dry-etched in the step (4).

### Claim 4 (depends on 1)

The pattern-forming method according to claim 1, wherein the polysiloxane (A) is a hydrolytic condensation product of a compound that includes a silane compound represented by formula (1):
R1aR2bSiX4-a-b (1)
wherein, in the formula (1), R1 represents a monovalent hydrocarbon group having a fluorine atom, wherein a part or all of hydrogen atoms contained in the hydrocarbon group may be substituted; R2 represents a hydrogen atom or a monovalent hydrocarbon group, wherein the hydrocarbon group may be substituted with a group which is other than a fluorine atom and which is other than a group having a fluorine atom; X represents a halogen atom or —OR3, wherein R3 represents a monovalent organic group; a is an integer of 1 to 3; and b is an integer of 0 to 2, wherein (a+b)≦3 is satisfied, and in the case in which R1, R2 and X are each present in a plurality of number, the R1s, R2s and Xs present in a plurality of number may be each the same or different.

### Claim 5 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the polysiloxane (A) is no less than 70% by mass based on a total solid content of the polysiloxane composition.

### Claim 6 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the polysiloxane (A) is no less than 80% by mass based on a total solid content of the polysiloxane composition.

### Claim 7 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.01 parts by mass to 10 parts by mass with respect to 100 parts by mass of the polysiloxane (A).

### Claim 8 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.05 parts by mass to 6 parts by mass with respect to 100 parts by mass of the polysiloxane (A).

### Claim 9 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.2 parts by mass to 5 parts by mass with respect to 100 parts by mass of the polysiloxane (A).

### Claim 10 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the crosslinking accelerator (B) in the polysiloxane composition is 0.5 parts by mass to 4 parts by mass with respect to 100 parts by mass of the polysiloxane (A).

### Claim 11 (depends on 1)

The pattern-forming method according to claim 1, wherein the polysiloxane composition further comprises a solvent.

### Claim 12 (depends on 1)

The pattern-forming method according to claim 1 wherein a content of the water (C) in the polysiloxane composition is 0.1% by mass to 20% by mass.

### Claim 13 (depends on 1)

The pattern-forming method according to claim 1, wherein a content of the water (C) in the polysiloxane composition is 0.2% by mass to 15% by mass.