# US 9,434,606 B2 · Micromechanical inertial sensor and method for manufacturing same

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- Number: US 9,434,606 B2
- Document ID: US9434606B2
- Status: Granted
- Kind: B2
- Application number: 13/890,752
- Filed: 2013-05-09
- Published: 2013-11-14
- Granted: 2016-09-06
- Earliest claimed: 2012-05-14
- Assignees: Robert Bosch GmbH
- Applicants: Robert Bosch GmbH
- Inventors: Johannes Classen; Mirko Hattass; Daniel Christoph Meisel
- Web page: https://patentgrep.com/patent/US9434606B2

## CPC

- B81C 1/00134: {comprising flexible or deformable structures (manufacture of MEMS devices for specific applications, see relevant places, e.g. gyroscopes G01C19/5719, pressure sensors G01L9/0042, accelerometers G01P15/0802, acoustic transducers or diaphragms therefor H04R31/00)}
- B81C 1/00682: {Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065}
- B81B 3/0018: {Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators}
- B81C 1/00246: {Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate}
- B81C 1/00333: {Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325}
- G01P 15/0802: {Details}
- B81B 2201/025: Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- G01P: MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT (measuring or recording blood flow A61B5/02, A61B8/06; monitoring speed or deceleration of electrically-propelled vehicles B60L3/00; vehicle lighting systems adapted to indicate speed B60Q1/54; determining position or course in navigation, measuring ground distance in geodesy or surveying G01C; combined measuring devices for measuring two or more variables of movement G01C23/00; measuring velocity of sound G01H; measuring velocity of light G01J7/00; measuring direction or velocity of solid objects by reception or emission of radiowaves or other waves and based on propagation effects, e.g. Doppler effect, propagation time, direction of propagation, G01S; measuring speed of nuclear radiation G01T; measuring acceleration of gravity G01V; {measuring or recording the speed of trains B61L23/00; speed indicators incorporated in motor vehicles B60K35/00; measuring frequency or phase G01R; traffic control G08G})

## Abstract

A micromechanical inertial sensor includes an ASIC element having a processed front side, an MEMS element having a micromechanical sensor structure, and a cap wafer mounted above the micromechanical sensor structure, which sensor structure includes a seismic mass and extends over the entire thickness of the MEMS substrate. The MEMS element is mounted on the processed front side of the ASIC element above a standoff structure and is electrically connected to the ASIC element via through-contacts in the MEMS substrate and in adjacent supports of the standoff structure. A blind hole is formed in the MEMS substrate in the area of the seismic mass, which blind hole is filled with the same electrically conductive material as the through-contacts, the conductive material having a greater density than the MEMS substrate.

## Claims

### Claim 1

A micromechanical inertial sensor, comprising:
at least one ASIC element having a processed front side;
at least one MEMS element having a micromechanical sensor structure which includes at least one seismic mass and extends over an entire thickness of a substrate of the MEMS element, wherein the MEMS element is mounted on the processed front side of the ASIC element above a standoff structure, and wherein the MEMS element is electrically connected to the ASIC element via through-contacts in the substrate of the MEMS element and in adjacent supports of the standoff structure; and
a cap wafer mounted above the micromechanical sensor structure of the MEMS element;
wherein, at least in an area of the seismic mass, at least one blind hole is formed in the substrate of the MEMS element, the blind hole being filled with an electrically conductive material which also fills the through-contacts, and wherein the electrically conductive material has a greater density than the substrate material of the MEMS element.

### Claim 2 (depends on 1)

The inertial sensor as recited in claim 1, wherein the through-contacts and the at least one blind hole are filled with one of tungsten, copper, gold, platinum or iridium.

### Claim 3 (depends on 2)

The inertial sensor as recited in claim 2, wherein the standoff structure is formed (i) from at least one insulating layer and (ii) on the processed front side of the ASIC element.

### Claim 4 (depends on 2)

The inertial sensor as recited in claim 2, wherein the cap wafer is mounted on the MEMS element or the ASIC element.

### Claim 5 (depends on 1)

The inertial sensor as recited in claim 1, wherein the at least one blind hole being filled with the electrically conductive material does not conduct electricity through the entire thickness of the substrate of the MEMS element.