# US 9,434,166 B2 · Heating system and method for microfluidic and micromechanical applications

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- Number: US 9,434,166 B2
- Document ID: US9434166B2
- Status: Granted
- Kind: B2
- Application number: 14/316,487
- Filed: 2014-06-26
- Published: 2014-10-16
- Granted: 2016-09-06
- Earliest claimed: 2007-12-27
- Assignees: STMicroelectronics S.r.l.
- Applicants: STMicroelectronics, Inc.
- Inventors: Ming Fang; Fuchao Wang
- Web page: https://patentgrep.com/patent/US9434166B2

## CPC

- B81C 1/00119: {Arrangement of basic structures like cavities or channels, e.g. suitable for microfluidic systems}
- B41J 2/14056: {Plural heating elements per ink chamber}
- B41J 2/14072: {Electrical connections, e.g. details on electrodes, connecting the chip to the outside...}
- B41J 2/14137: {Resistor surrounding the nozzle opening}
- B41J 2/16: Production of nozzles
- B41J 2/1601: {Production of bubble jet print heads (B41J2/1606, B41J2/162 take precedence)}
- B41J 2/1628: {dry etching}
- B41J 2/1629: {wet etching}
- B41J 2/1639: {sacrificial molding}
- B81B 1/006: {Microdevices formed as a single homogeneous piece, i.e. wherein the mechanical function is obtained by the use of the device, e.g. cutters}
- H10D 1/47: Resistors having no potential barriers
- B81B 2201/052: Ink-jet print cartridges
- B81B 2201/058: Microfluidics not provided for in B81B2201/051 - B81B2201/054
- B81C 2201/013: Etching
- B81C 2203/075: the electronic processing unit being integrated into an element of the micromechanical structure
- Y10T 29/49401: Fluid pattern dispersing device making, e.g., ink jet
- Y10T 29/49826: Assembling or joining
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B41J: TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B81B: MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES (piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/00, H10N35/00)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An integrated semiconductor heating assembly includes a semiconductor substrate, a chamber formed therein, and an exit port in fluid communication with the chamber, allowing fluid to exit the chamber in response to heating the chamber. The integrated heating assembly includes a first heating element adjacent the chamber, which can generate heat above a selected threshold and bias fluid in the chamber toward the exit port. A second heating element is positioned adjacent the exit port to generate heat above a selected threshold, facilitating movement of the fluid through the exit port away from the chamber. Addition of the second heating element reduces the amount of heat emitted per heating element and minimizes thickness of a heat absorption material toward an open end of the exit port. Since such material is expensive, this reduces the manufacturing cost and retail price of the assembly while improving efficiency and longevity thereof.

## Claims

### Claim 1

A device, comprising:
a semiconductor substrate having a surface;
a recess extending in the semiconductor substrate from the surface, the recess having a bottom surface;
a chamber formed in the recess below the surface of the semiconductor substrate;
a first heating element formed adjacent to the bottom surface of the recess, the first heating element having a ring shape;
a first dielectric layer over the first heating element in the recess;
a second dielectric layer over the recess; and
an outlet path extending from the chamber towards an external environment through the second dielectric layer.

### Claim 2 (depends on 1)

The device of claim 1 further comprising a second heating element formed adjacent to the bottom surface of the recess, the second heating element a having a ring shape, the first heating element being within the second heating element.

### Claim 3 (depends on 2)

The device of claim 2 further comprising a first electrical connection coupled to the first heating element and a second electrical connection coupled to the second heating element.

### Claim 4 (depends on 1)

The device of claim 1 further comprising a second heating element on the second dielectric layer around the outlet path.

### Claim 5 (depends on 4)

The device of claim 4 further comprising a third heating element on the second dielectric layer, the third heating element surrounding the second heating element.

### Claim 6 (depends on 1)

The device of claim 1 further comprising a second heating element on the second dielectric layer around the outlet path and a transistor formed in the substrate spaced from the recess, the transistor being coupled to the second heating element.

### Claim 7 (depends on 1)

The device of claim 1 further comprising an inlet path coupled to the recess through the substrate and a second heating element surrounding the inlet path.

### Claim 8 (depends on 7)

The device of claim 7 further comprising a third heating element surrounding the outlet path.

### Claim 9

A device, comprising:
a semiconductor substrate having a surface;
a recess extending in the semiconductor substrate from the surface, the recess having a bottom surface;
a chamber formed in the recess below the surface of the semiconductor substrate;
a first heating element formed adjacent to the bottom surface of the recess;
a first dielectric layer over the first heating element in the recess;
a second dielectric layer over the recess; and
an outlet path extending from the recess towards an external environment through the second dielectric layer.

### Claim 10 (depends on 9)

The device of claim 9 further comprising a second heating element formed adjacent to the bottom surface of the recess.

### Claim 11 (depends on 10)

The device of claim 10, the second heating element including an outer perimeter and an inner perimeter, the first heating element being positioned within the inner perimeter of the second heating element.

### Claim 12 (depends on 9)

The device of claim 9 further comprising a second heating element on the second dielectric layer surrounding the outlet path.

### Claim 13 (depends on 12)

The device of claim 12 further comprising a third heating element on the second dielectric layer, the third heating element surrounding the second heating element.

### Claim 14 (depends on 9)

The device of claim 9 further comprising:
a second heating element on the second dielectric layer surrounding the outlet path; and
a transistor formed in the substrate spaced from the recess, the transistor being coupled to the second heating element.

### Claim 15 (depends on 9)

The device of claim 9 further comprising:
an inlet path coupled to the recess through the substrate; and
a second heating element surrounding the inlet path.

### Claim 16 (depends on 15)

The device of claim 15 further comprising a third heating element surrounding the outlet path.

### Claim 17

A device, comprising:
a semiconductor substrate;
a recess formed in the semiconductor substrate, the recess having a bottom surface;
a first heating element formed adjacent to the bottom surface of the recess, the first heating element having a ring shape;
a first dielectric layer over the first heating element in the recess;
a second dielectric layer over the recess;
an outlet path extending from the recess towards an external environment through the second dielectric layer; and
a second heating element formed adjacent to the bottom surface of the recess, the second heating element a having a ring shape, the first heating element being within the second heating element.

### Claim 18 (depends on 17)

The device of claim 17 further comprising a second heating element on the second dielectric layer around the outlet path.

### Claim 19

A device, comprising:
a semiconductor substrate;
a recess formed in the semiconductor substrate, the recess having a bottom surface;
a first heating element formed adjacent to the bottom surface of the recess, the first heating element having a ring shape;
a first dielectric layer over the first heating element in the recess;
a second dielectric layer over the recess;
an outlet path extending from the recess towards an external environment through the second dielectric layer; and
an inlet path coupled to the recess through the substrate and a second heating element surrounding the inlet path.

### Claim 20 (depends on 19)

The device of claim 19 further comprising a third heating element surrounding the outlet path.