# US 9,434,046 B2 · Polishing composition and polishing method using the same

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- Number: US 9,434,046 B2
- Document ID: US9434046B2
- Status: Granted
- Kind: B2
- Application number: 13/923,477
- Filed: 2013-06-21
- Published: 2013-10-31
- Granted: 2016-09-06
- Earliest claimed: 2008-02-01
- Assignees: Fujimi Incorporated
- Applicants: Fujimi Incorporated
- Inventors: Mikikazu Shimizu; Tomohiko Akatsuka; Kazuya Sumita
- Web page: https://patentgrep.com/patent/US9434046B2

## CPC

- B24B 37/044: {characterised by the composition of the lapping agent}
- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P 52/403: {of conductive or resistive materials}
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a polishing composition that can be suitably used in polishing of polysilicon, and a polishing method using the polishing composition. The polishing composition contains a nitrogen-containing nonionic surfactant and abrasive grains and has a pH of 9 to 12. The content of the nitrogen-containing nonionic surfactant in the polishing composition is preferably 20 to 500 ppm. The abrasive grains contained in the polishing composition are preferably colloidal silica. The average primary particle diameter of the abrasive grains contained in the polishing composition is preferably 10 to 90 nm. The content of the abrasive grains in the polishing composition is preferably 1.0 to 5.0% by mass.

## Claims

### Claim 1

A method of polishing polysilicon, comprising:
preparing a polishing composition containing colloidal silica abrasive grains and a nitrogen-containing nonionic surfactant selected from the group consisting of a polyoxyethylene alkyl amino ether and a polyoxyethylene fatty acid amide, wherein the nitrogen-containing nonionic surfactant is contained in the polishing composition in an amount of 20 to 85 ppm, and wherein the polishing composition has a pH of greater than 9 to 12; and
using the polishing composition to polish polysilicon.

### Claim 2 (depends on 1)

The method according to claim 1, wherein the nitrogen-containing nonionic surfactant is polyoxyethylene alkyl amino ether.

### Claim 3 (depends on 1)

The method according to claim 1, wherein the nitrogen-containing nonionic surfactant is polyoxyethylene fatty acid amide.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the average primary particle diameter of the silica abrasive grains is 10 to 90 nm.

### Claim 5 (depends on 1)

The method according to claim 1, wherein the silica abrasive grains are contained in the polishing composition in an amount of 1.0 to 5.0% by mass.

### Claim 6

A method of polishing polysilicon, comprising:
preparing a polishing composition consisting of colloidal silica abrasive grains, a pH adjuster, water, and one or more types of nitrogen-containing nonionic surfactants selected from the group consisting of a polyoxyethylene alkyl amino ether and a polyoxyethylene fatty acid amide, wherein the polishing composition has a pH of greater than 9 to 12; and
using the polishing composition to polish polysilicon.

### Claim 7 (depends on 6)

The method according to claim 6, wherein the one or more types of nitrogen-containing nonionic surfactants are contained in the polishing composition in an amount of 20 to 85 ppm.

### Claim 8 (depends on 6)

The method according to claim 6, wherein the one or more types of nitrogen-containing nonionic surfactant are polyoxyethylene fatty acid amide.

### Claim 9

A method of polishing polysilicon, comprising:
preparing a polishing composition consisting of colloidal silica abrasive grains, a pH adjuster, water, one or more types of nitrogen-containing nonionic surfactants selected from the group consisting of a polyoxyethylene alkyl amino ether and a polyoxyethylene fatty acid amide, and at least one of a chelating agent, a water-soluble polymer, a surfactant other than nitrogen-containing nonionic surfactants, an antiseptic, a fungicide, and a rust preventive, wherein the polishing composition has a pH of greater than 9 to 12; and
using the polishing composition to polish polysilicon.

### Claim 10 (depends on 9)

The method according to claim 9, wherein the one or more types of nitrogen-containing nonionic surfactants are contained in the polishing composition in an amount of 20 to 85 ppm.

### Claim 11 (depends on 9)

The method according to claim 9, wherein the one or more types of nitrogen-containing nonionic surfactant are polyoxyethylene fatty acid amide.