# US 9,433,967 B2 · Pattern inspection method, pattern formation control method, and pattern inspection apparatus

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 9,433,967 B2
- Document ID: US9433967B2
- Status: Granted
- Kind: B2
- Application number: 14/283,339
- Filed: 2014-05-21
- Published: 2015-08-20
- Granted: 2016-09-06
- Earliest claimed: 2014-02-20
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Masafumi Asano
- Web page: https://patentgrep.com/patent/US9433967B2

## CPC

- B05C 21/005: {Masking devices (stencils B05C17/06; masking devices for which the means for applying liquids or other fluent material is spraying or is not important B05B12/20)}
- C09K 11/06: containing organic luminescent materials
- G01N 21/6458: {Fluorescence microscopy (fluorescence microscopes per se G02B21/0076 and G02B21/16)}
- G01N 21/956: Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)}
- G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
- H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects}
- B05C: APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (spraying apparatus, atomising apparatus, nozzles B05B; plant for applying liquids or other fluent materials to objects by electrostatic spraying B05B5/08)
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

According to one embodiment, in a pattern inspection method, a guide pattern is formed on a substrate. A block copolymer is applied on the guide pattern. Thereafter, the substrate is heated according to a predetermined heating condition to promote directed self assembly corresponding to a shape of the guide pattern with respect to the block copolymer. Further, the substrate is observed by a fluorescence microscope during heating or after heating the substrate.

## Claims

### Claim 1

A pattern inspection apparatus comprising:
an application unit that applies a block copolymer on a substrate;
a heating unit that heats the substrate according to a predetermined heating condition, and that promotes directed self assembly of the block copolymer, the directed self assembly corresponding to a shape of a guide pattern formed on the substrate
an observation unit that observes the substrate by a fluorescence microscope during heating or after heating the substrate; and
a control unit that changes the heating condition,
wherein,
in the heating unit, a heating area of the substrate is divided into a plurality of regions, and
the control unit changes the heating condition in units of the regions.

### Claim 2 (depends on 1)

The pattern inspection apparatus according to claim 1, wherein the control unit performs a determination of acceptance of a pattern that has been generated by the directed self assembly.

### Claim 3 (depends on 2)

The pattern inspection apparatus according to claim 2, wherein
the control unit performs the determination of acceptance based on an arrangement position of the pattern and an arrangement position of the guide pattern.

### Claim 4 (depends on 1)

The pattern inspection apparatus according to claim 1, wherein the control unit changes a heating temperature, which is the heating condition, of the substrate.

### Claim 5 (depends on 1)

The pattern inspection apparatus according to claim 1, wherein the control unit changes a heating time, which is the heating condition, of the substrate.

### Claim 6 (depends on 1)

The pattern inspection apparatus according to claim 1, wherein the control unit changes a temperature increasing or decreasing process, which is the heating condition, of the substrate.

### Claim 7 (depends on 1)

The pattern inspection apparatus according to claim 1, wherein the control unit changes a heating atmosphere, which is the heating condition, of the substrate.

### Claim 8 (depends on 1)

The pattern inspection apparatus according to claim 1, further comprising a display device that displays an image of the substrate observed by the fluorescence microscope.
