US 9,433,100 B2 · Low-stress TSV design using conductive particles

Abstract

A component can include a substrate having a first surface and a second surface remote therefrom, an opening extending in a direction between the first and second surfaces, and a conductive via extending within the opening. The substrate can have a CTE less than 10 ppm/° C. The conductive via can include a plurality of base particles each including a first region of a first metal substantially covered by a layer of a second metal different from the first metal. The base particles can be metallurgically joined together and the second metal layers of the particles can be at least partially diffused into the first regions. The conductive via can include voids interspersed between the joined base particles. The voids can occupy 10% or more of a volume of the conductive via.

Claims23

Dependent claims

A method of fabricating a component, comprising:

providing a substrate having a first surface and a second surface remote therefrom, the substrate having a CTE less than 10 ppm/° C., the substrate having an opening extending from the first surface towards the second surface;
depositing a plurality of base particles into the opening, each base particle including a first metal region and a second metal layer covering the first metal region, the second metal layer having a melting point below 400° C., the first metal region having a melting point of 500° C. or more, at least some of the base particles further including a non-metal core region surrounded by the first metal region;
and
heating the base particles so that each second metal layer fuses the base particles to one another to form a continuous conductive via extending within the opening.

1 more element

Dependencies are inferred from the claim text.

Low-stress TSV design using conductive particles

Life of this patent

Low-stress TSV design using conductive particles

Life of this patent

Abstract

Claims23