Electric power semiconductor device

An electric power semiconductor device comprising:

• a heat transfer plate, to the side opposite to the mounting side of which a heat radiation material is adhered through an insulating layer;
• a printed wire board that is disposed in such a way as to face, with a predetermined gap, the mounting side of the heat transfer plate, on the side of which, opposite to the side facing the heat transfer plate, an electrode strip is formed, and in the vicinity of the electrode strip of which, an opening portion is provided;
• an electric power semiconductor element that is disposed between the heat transfer plate and the printed wire board and whose rear side is adhered to the mounting side of the heat transfer plate;
• and
• a wiring member, one end of which is bonded to a first bonding portion of an element electrode formed on the front side of the electric power semiconductor element and the other end of which is bonded to a second bonding portion of the electrode strip,
• wherein the electrode strip and the opening portion are arranged in such a way that at least part of the second bonding portion is included in a space that extends from the element electrode to the printed wire board in a direction vertical to the mounting side and in such a way that the first bonding portion is included in a space that extends from the opening portion to the element electrode in the vertical direction.