Doherty power amplifier with tunable impedance load
AssigneeRF Micro Devices, Inc.
InventorsHamhee Jeon, Kevin Wesley Kobayashi
Life of this patent
Estimating the term…
Loading patent…
AssigneeRF Micro Devices, Inc.
InventorsHamhee Jeon, Kevin Wesley Kobayashi
Estimating the term…
Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
A radio frequency (RF) amplification device comprising:
A radio frequency (RF) amplification device comprising:
A radio frequency, (RF) amplification device comprising:
A radio frequency, (RF) amplification device comprising:
A radio frequency, (RF) amplification device comprising:
A radio frequency, (RF) amplification device comprising:
A radio frequency ORFS amplification device comprising:
A radio frequency (RF) amplification device comprising:
A radio frequency, (RF) amplification device comprising:
Dependencies are inferred from the claim text.