Back to results
US 9,431,960 B2Granted
Solution testing equipment
AssigneesRohm Co., Ltd., Kyoto University
InventorsToshikazu Mukai, Yuichi Ogawa
Life of this patent
Estimating the term…
Abstract
There is provided solution testing equipment which can detect an output variation of a THz oscillation device using a THz wave (hν) by contacting a liquid or cells on an RTD oscillation device, and can reduce the size and weight thereof. The solution testing equipment includes: a THz oscillation device configured to radiate the THz wave Is; a THz detection device configured to receive the THz wave Is; and a solution as a test object disposed on the THz oscillation device, in which the solution is tested on the basis of output characteristics of the terahertz wave varying in response to a relative permittivity of the solution.
Claims27
A solution testing equipment, comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation device;
- a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film;
- and
- a glass plate disposed at an upper side of the insulating film, wherein
- the solution is disposed on the THz oscillation device by interposing the glass plate therebetween, and
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution.
5 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation device;
- and
- a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, wherein
- the THz oscillation device comprises:
- an insulator substrate;
- a first electrode disposed on the insulator substrate;
- an inter-electrode insulating layer disposed on the first electrode;
- an interlayer insulating film disposed on the insulator substrate;
- a second electrode disposed on the interlayer insulating film, the second electrode disposed to be opposite to the first electrode via the inter-electrode insulating layer toward the first electrode;
- a semiconductor layer disposed on the second electrode;
- an MIM reflector formed between the first electrode and the second electrode so that the inter-electrode insulating layer is sandwiched therebetween;
- a resonator disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the resonator being adjacent to the MIM reflector;
- an active element disposed at a substantially central part of the resonator;
- a waveguide disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the waveguide adjacent to the resonator;
- and
- a horn apertural area disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the horn apertural area adjacent to the waveguide.
16 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation device;
- and
- a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, further wherein
- the THz oscillation device comprises:
- an insulator substrate;
- a first electrode disposed on the insulator substrate;
- an inter-electrode insulating layer disposed on the first electrode;
- an interlayer insulating film disposed on the insulator substrate;
- a second electrode disposed on the interlayer insulating film, the second electrode disposed to be opposite to the first electrode via the inter-electrode insulating layer toward the first electrode;
- a semiconductor layer disposed on the second electrode;
- a first slot line electrode disposed on the insulator substrate to be adjacent to the first electrode, the first slot line electrode disposed to be opposite to the first electrode in an opposite side of the second electrode;
- a second slot line electrode disposed on the insulator substrate to be adjacent to the second electrode, the second slot line electrode disposed to be opposite to the second electrode in an opposite side of the first electrode;
- an MIM reflector formed between the first electrode and the second electrode so that the inter-electrode insulating layer is sandwiched therebetween;
- a resonator disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the resonator adjacent to the MIM reflector;
- an active element disposed at a substantially central part of the resonator;
- a first waveguide disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the first waveguide adjacent to the resonator;
- a first horn apertural area disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the first horn apertural area adjacent to the first waveguide;
- a second waveguide disposed between the first electrode and the first slot line electrode opposite to each other on the insulator substrate;
- a second horn apertural area disposed between the first electrode and the first slot line electrode opposite to each other on the insulator substrate, the second horn apertural area adjacent to the second waveguide;
- a third waveguide disposed between the second electrode and the second slot line electrode opposite to each other on the insulator substrate;
- and
- a third horn apertural area disposed between the second electrode and the second slot line electrode opposite to each other on the insulator substrate, the third horn apertural area adjacent to the third waveguide.
22 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation device;
- and
- a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, wherein
- the THz oscillation device comprises:
- a semiconductor substrate;
- a second electrode disposed on the semiconductor substrate;
- an inter-electrode insulating layer disposed on the second electrode;
- a first electrode disposed via the inter-electrode insulating layer toward the second electrode, the first electrode disposed to be opposite to the second electrode on the semiconductor substrate;
- an MIM reflector formed between the first electrode and the second electrode so that the inter-electrode insulating layer is sandwiched therebetween;
- a resonator disposed between the first electrode and the second electrode opposite to each other on the semiconductor substrate, the resonator adjacent to the MIM reflector;
- an active element disposed at a substantially central part of the resonator;
- a waveguide disposed between the first electrode and the second electrode opposite to each other on the semiconductor substrate, the waveguide adjacent to the resonator;
- and
- a horn apertural area disposed between the first electrode and the second electrode opposite to each other on the semiconductor substrate, the horn apertural area adjacent to the waveguide, wherein
- the THz detection device has the same structure as that of the THz oscillation device,
- the active element has asymmetrical forward and reverse current voltage characteristics, and
- the THz oscillation device operates as an oscillation device at a first operational point indicating negative differential resistance, and the THz detection device operates as a detection device at a second operational point indicating nonlinear characteristics which are not negative resistance regions.
17 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- an insulating film disposed so as to cover the THz oscillation device, the insulating film being in contact with the THz oscillation device;
- and
- a solution as a test object disposed on the THz oscillation device, the solution being in contact with the insulating film, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, wherein
- the THz oscillation device comprises:
- a semiconductor substrate;
- a first electrode disposed on the semiconductor substrate;
- an active element formed on the first electrode;
- and
- a second electrode formed on the active element, wherein
- the insulating film is formed across and in contact with the active element, the first electrode, and the second electrode.
10 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- and
- a solution as a test object disposed on the THz oscillation device, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, wherein
- the THz oscillation device comprises:
- an insulator substrate;
- a first electrode disposed on the insulator substrate;
- an inter-electrode insulating layer disposed on the first electrode;
- an interlayer insulating film disposed on the insulator substrate;
- a second electrode disposed on the interlayer insulating film, the second electrode disposed to be opposite to the first electrode via the inter-electrode insulating layer toward the first electrode;
- a semiconductor layer disposed on the second electrode;
- an MIM reflector formed between the first electrode and the second electrode so that the inter-electrode insulating layer is sandwiched therebetween;
- a resonator disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the resonator adjacent to the MIM reflector;
- an active element disposed at a substantially central part of the resonator;
- a waveguide disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the waveguide adjacent to the resonator;
- and
- a horn apertural area disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the horn apertural area adjacent to the waveguide.
15 more elements
A solution testing equipment comprising:
- a terahertz (THz) oscillation device configured to radiate a THz wave;
- a THz detection device configured to receive the THz wave;
- and
- a solution as a test object disposed on the THz oscillation device, wherein
- the solution is tested on the basis of output characteristics of the THz wave varying in response to a relative permittivity of the solution, wherein
- the THz oscillation device comprises:
- an insulator substrate;
- a first electrode disposed on the insulator substrate;
- an inter-electrode insulating layer disposed on the first electrode;
- an interlayer insulating film disposed on the insulator substrate;
- a second electrode disposed on the interlayer insulating film, the second electrode disposed to be opposite to the first electrode via the inter-electrode insulating layer toward the first electrode;
- a semiconductor layer disposed on the second electrode;
- a first slot line electrode disposed on the insulator substrate to be adjacent to the first electrode, the first slot line electrode disposed to be opposite to the first electrode in an opposite side of the second electrode;
- a second slot line electrode disposed on the insulator substrate to be adjacent to the second electrode, the second slot line electrode disposed to be opposite to the second electrode in an opposite side of the first electrode;
- an MIM reflector formed between the first electrode and the second electrode so that the inter-electrode insulating layer is sandwiched therebetween;
- a resonator disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the resonator adjacent to the MIM reflector;
- an active element disposed at a substantially central part of the resonator;
- a first waveguide disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the first waveguide adjacent to the resonator;
- a first horn apertural area disposed between the first electrode and the second electrode opposite to each other on the insulator substrate, the first horn apertural area adjacent to the first waveguide;
- a second waveguide disposed between the first electrode and the first slot line electrode opposite to each other on the insulator substrate;
- a second horn apertural area disposed between the first electrode and the first slot line electrode opposite to each other on the insulator substrate, the second horn apertural area adjacent to the second waveguide;
- a third waveguide disposed between the second electrode and the second slot line electrode opposite to each other on the insulator substrate;
- and
- a third horn apertural area disposed between the second electrode and the second slot line electrode opposite to each other on the insulator substrate, the third horn apertural area adjacent to the third waveguide.
21 more elements
Dependencies are inferred from the claim text.