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US 9,431,631 B2Granted
Plasma curing of PECVD HMDSO film for OLED applications
AssigneeApplied Materials, Inc.
InventorsJrjyan Jerry Chen, Soo Young Choi
Life of this patent
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Abstract
Methods for forming an OLED device are described. An encapsulation layer having a buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is deposited on the first barrier layer and is cured with a fluorine-containing plasma at a temperature less than 100 degrees Celsius. The second barrier layer is then deposited on the buffer layer.
Claims20
A method for forming an organic light emitting diode (OLED) device, comprising:
- depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon;
- depositing a buffer layer on the first barrier layer;
- curing the buffer layer with a fluorine-containing plasma at a temperature less than about 100 degrees Celsius;
- and
- depositing a second barrier layer on the cured buffer layer.
2 more elements
A method for forming an OLED device, comprising:
- depositing a first barrier layer on a region of a substrate having an OLED structure disposed thereon;
- depositing a buffer layer on the first barrier layer;
- curing the buffer layer with a fluorine-containing plasma for about 2 minutes;
- and
- depositing a second barrier layer on the cured buffer layer.
2 more elements
A method for forming an OLED device, comprising:
- forming a contact layer over a substrate;
- forming an OLED structure over the contact layer;
- depositing a first barrier layer over the OLED structure;
- depositing a buffer layer on the first barrier layer;
- curing the buffer layer with a fluorine-containing plasma at a temperature less than about 100 degrees Celsius;
- and
- depositing a second barrier layer on the cured buffer layer.
4 more elements
Dependencies are inferred from the claim text.