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US 9,431,622 B2Granted
Quantum dot optoelectronic device and methods therfor
AssigneeBrother International Corporation
InventorFarzad Parsapour
Life of this patent
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Abstract
An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.
Claims18
An optoelectronic device comprising:
- a quantum dot layer including a plurality of quantum dots which do not have capping layers, wherein the quantum dot layer is formed by removing an organic capping layer of the quantum dots by a physical surface treatment including both thermal treatment and plasma processing;
- and
- wherein the quantum dot layer has an improved layer morphology including a cumulative decrease of at least about 20% in surface roughness as compared to a quantum dot layer formed by a physical surface treatment including plasma processing only.
Dependencies are inferred from the claim text.