Organic resistive random access memory and a preparation method thereof

A preparation method of an organic resistive random access memory, comprises the steps of:

• 1) growing ITO on a Si substrate as a bottom electrode and patterning the bottom electrode by using standard photolithography technology, wherein the bottom electrode is formed by physical vapor deposition (PVD) process and has a thickness between 200 nm and 500 nm;
• 2) forming a photoresist pattern on the bottom electrode of ITO by using electron beam photolithography, growing Al2O3 to a thickness of 1 nm to 3 nm by using atomic layer deposition (ALD) technology, and forming a local Al2O3 pattern by using a lift-off process;
• 3) growing a first parylene-C layer by using polymer CVD technology, wherein the deposition process is performed by using a parylene polymer CVD apparatus with the standard parameters, where the first layer of parylene-C layer has a thickness of 20 nm, a deposition speed is between 1 nm/min and 10 nm/min;
• 4) forming a photoresist pattern on the first parylene-C layer by using electron beam photolithography once more, growing Al2O3 to a thickness of 1 nm to 3 nm by using atomic layer deposition (ALD) once more, and forming a local Al2O3 pattern by using a lift-off process;
• 5) growing a second parylene-C layer by using polymer CVD technology, wherein the deposition is performed by using a parylene polymer CVD apparatus with standard parameters, where the second layer of parylene-C layer has a thickness of 20 nm, and a deposition speed is between 1 nm/min and 10 nm/min;
• 6) forming a photoresist pattern on the second parylene-C layer by using electron beam photolithography once more, growing Al2O3 to a thickness of 1 nm to 3 nm by using atomic layer deposition (ALD) once more, and forming a local Al2O3 pattern by using a lift-off process;
• 7) defining a bottom electrode-leading out via by photolithography and RIE etching;
• 8) sputtering Al, by PVD process, with a thickness between 200 nm and 500 nm, and defining a top electrode by conventional photolithography and lift-off processes, meanwhile the bottom electrode is led out.