Methods of manufacturing a phase change memory device including a heat sink
AssigneeSamsung Electronics Co., Ltd.
InventorsTae-Jin Park, Yoon-Jong Song, Chil-Hee Chung
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Abstract
A phase change memory device includes a phase change memory unit and a heat sink. The phase change memory unit includes a phase change material layer pattern, a lower electrode beneath the phase change material layer pattern configured to heat the phase change material layer pattern, and an upper electrode on the phase change material layer pattern. The heat sink configured to absorb heat from the phase change memory unit. The heat sink has a top surface lower than a top surface of the upper electrode and is spaced apart from the phase change memory unit.
Claims7
A method of manufacturing a phase change memory device, the method comprising:
- forming a lower electrode on a substrate, including:
- forming a lower electrode layer pattern;
- and
- forming a first recess in the lower electrode layer pattern;
- forming a heat sink in the first recess adjacent to and spaced apart from the lower electrode, wherein forming the heat sink includes:
- forming a first insulation layer on the substrate to cover the lower electrode;
- forming a metal layer on the first insulation layer to sufficiently fill the first recess space adjacent the lower electrode;
- and
- removing an upper portion of the metal layer to a level lower than the top surface of the lower electrode;
- forming a phase change material layer pattern on the lower electrode;
- and
- forming an upper electrode on the phase change material layer pattern;
- wherein forming the heat sink includes forming the heat sink having a top surface lower than a top surface of the upper electrode.
A method of manufacturing a phase change memory device, the method comprising:
- forming a first metal layer on a substrate;
- patterning the first metal layer to form lower electrodes with first recesses between the lower electrodes;
- forming a first insulating layer on the lower electrodes;
- forming a second metal layer on the first insulating layer in the first recesses;
- removing an upper portion of the second metal layer to form a heat sink;
- forming a second insulating layer on the first insulating layer and the heat sink;
- removing at least a portion of the first and second insulating layers to expose the lower electrode;
- removing an upper portion of the lower electrodes to form second recesses;
- and
- forming a phase change material in the second recesses.
Dependencies are inferred from the claim text.