Oxide film scheme for RRAM structure

An RRAM (resistive random access memory) cell, comprising:

• a bottom electrode disposed over a semiconductor substrate;
• a dielectric data storage layer disposed over the bottom electrode and having a variable resistance, wherein the dielectric data storage layer comprises a performance enhancing layer including a hydrogen-doped oxide and an overlying data retention layer comprising a stacked structure that alternates between layers of hafnium oxide and layers of aluminum oxide;
• a cap layer arranged over the dielectric data storage layer;
• and
• a top electrode arranged over the cap layer.

An RRAM (resistive random access memory) cell, comprising:

• a bottom electrode disposed over a semiconductor substrate;
• a hydrogen-doped hafnium oxide layer disposed onto the bottom electrode;
• a hafnium aluminum oxide layer disposed onto and in direct contact with a top surface of the hydrogen-doped hafnium oxide layer;
• and
• a top electrode arranged over the hafnium aluminum oxide layer.