Methods of forming semiconductor device structures
AssigneeMicron Technology, Inc.
InventorsScott E. Sills, Dan B. Millward
Life of this patent
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Abstract
A method of forming a semiconductor device structure. The method comprises forming a block copolymer assembly comprising at least two different domains over an electrode. At least one metal precursor is selectively coupled to the block copolymer assembly to form a metal-complexed block copolymer assembly comprising at least one metal-complexed domain and at least one non-metal-complexed domain. The metal-complexed block copolymer assembly is annealed in to form at least one metal structure. Other methods of forming a semiconductor device structures are described. Semiconductor device structures are also described.
Claims8
A method of forming a semiconductor device structure, comprising:
- forming a patterned dielectric material comprising at least one dielectric structure and at least one opening over an electrode;
- forming a polymer material over and in contact with at least a surface of the electrode exposed by the at least one opening;
- exposing the at least one dielectric structure and the polymer material to a staining agent to form a metal-complexed assembly comprising at least one metal-complexed polymer structure;
- treating the metal-complexed assembly to form at least one metal structure;
- forming an active material comprising one or more of a chalcogenide compound, a transition metal oxide, and a silicon oxide in contact with the at least one metal structure and the at least one dielectric structure;
- and
- forming a structure in contact with at least a portion of the active material at a position overlying the at least one metal structure.
A method of forming a semiconductor device structure, comprising:
- forming a patterned dielectric material comprising at least one dielectric structure and at least one opening over an electrode;
- covering the at least one dielectric material structure with a polymer material;
- at least partially filling the at least one opening with the polymer material;
- exposing the at least one dielectric structure and the polymer material to a staining agent to form a metal-complexed assembly comprising at least one metal-complexed polymer structure;
- and
- treating the metal-complexed assembly to form at least one metal structure.
A method of forming a semiconductor device structure, comprising:
- forming a patterned dielectric material comprising at least one dielectric structure and at least one opening over an electrode;
- forming a polymer material over and in contact with at least a surface of the electrode exposed by the at least one opening;
- exposing the at least one dielectric structure and the polymer material to a staining agent to form a metal-complexed assembly comprising at least one metal-complexed polymer structure;
- treating the metal-complexed assembly to form at least one metal structure;
- exposing the metal-complexed assembly to an oxidizing agent comprising at least one of air, oxygen, nitrogen dioxide, water, nitrous oxide, dinitrogen tetroxide, and ozone;
- and
- exposing the metal-complexed assembly to a reducing atmosphere and a temperature greater than or equal to the decomposition temperature of the polymer after exposing the metal-complexed assembly to the oxidizing agent.
Dependencies are inferred from the claim text.