Resistive random access memory (RRAM) and method of making
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Wen Liao, Wen-Ting Chu, Kuo-Chi Tu, Chin-Chieh Yang, Chih-Yang Chang, Hsia-Wei Chen
Life of this patent
Estimating the term…
Abstract
The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure electrically connected to the transistor. The RRAM structure includes a bottom electrode having a via portion and a top portion, a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode, and a top electrode over the resistive material layer and having a smaller width than the resistive material layer.
Claims20
A resistive random access memory (RRAM) cell, comprising:
- a transistor;
- and
- an RRAM structure electrically connected to the transistor and having
- a bottom electrode having a via portion and a top portion, wherein said via portion of the bottom electrode is embedded in a first RRAM stop layer;
- a resistive material layer over the bottom electrode and having a same width as the top portion of the bottom electrode;
- and
- a top electrode over the resistive material layer and having a smaller width than the resistive material layer, wherein a full width of the entirety of the top electrode is substantially constant.
A resistive random access memory (RRAM) cell, comprising:
- a transistor;
- an RRAM structure electrically connected to the transistor and having
- a bottom electrode having a via portion and a top portion, wherein said via portion of the bottom electrode is embedded in a RRAM stop layer;
- a resistive material layer over the bottom electrode;
- a top electrode over the resistive material layer and including tantalum nitride;
- and
- a conductive material connected to the top electrode of the RRAM structure;
- and
- a continuous second RRAM stop layer directly contacting a top surface of the top electrode and sidewalls of the top electrode and the bottom electrode;
- wherein the top electrode comprises
- a top face above the resistive material layer and the bottom electrode,
- a side face extending downwardly from the top face toward the resistive material layer and the bottom electrode, and
- a smaller width than the top portion of the bottom electrode.
A resistive random access memory (RRAM) structure, comprising:
- a bottom electrode comprising a via portion and a top portion, wherein a ratio of a thinnest thickness of the top portion to a thickest thickness of the top portion ranges from about 0.95 to 1;
- a resistive material layer over the bottom electrode;
- a top electrode over the resistive material layer, the top electrode having a width smaller than a width of the top portion of the bottom electrode;
- a continuous second RRAM stop layer contacting a top surface of the resistive material layer and a sidewall of the bottom electrode;
- and
- a dielectric material covering the continuous second RRAM stop layer.
Dependencies are inferred from the claim text.