Magnetic domain wall shift register memory devices with high magnetoresistance ratio structures

A magnetic domain wall shift register memory device, comprising:

• a seed layer;
• an antiferromagnetic layer disposed on the seed layer;
• a pinned layer disposed on the antiferromagnetic layer;
• a synthetic antiferromagnetic (SAF) layer spacer disposed on the pinned layer;
• a pinning layer disposed on the SAF layer spacer;
• a tunnel barrier layer disposed on the pinning layer;
• an alloy layer disposed on the tunnel barrier layer;
• and
• a magnetic track layer disposed on alloy layer.

A magnetic domain wall shift register memory device, comprising:

• a seed layer;
• a magnetic track layer disposed on the seed layer;
• an alloy layer disposed on the magnetic track layer;
• a tunnel barrier layer disposed on the alloy layer;
• a pinning layer disposed on the tunnel barrier layer;
• a synthetic antiferromagnetic (SAF) layer spacer disposed on the pinning layer and comprising Ru;
• a pinned layer disposed on the SAF spacer layer;
• and
• an antiferromagnetic layer disposed on the pinned layer and being selected from the group consisting of PtMn and IrMn.