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US 9,431,598 B2Granted
Sol-gel precursors and methods for making lead-based perovskite films
AssigneeDrexel University
InventorsWei-Heng Shih, Wan Y. Shih, Zuyan Shen, Huidong Li, Xiaotong Gao
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Abstract
A simple, economical sol-gel method was invented to produce thick and dense lead zirconate titanate (PZT) thin films that exhibit the stoichiometric chemical composition and unprecedented electrical and dielectric properties. The PZT films are the foundation of many microelectromechanical systems (MEMS) and nanoelectromechanical systems (NEMS) for micro/nano sensors and actuators applications.
Claims2
A method for producing a lead-containing perovskite film comprising the steps of:
- (a) dissolving lead acetate and other film components in a suitable solvent to provide a precursor solution,
- (b) depositing the precursor on a substrate;
- (c) pyrolyzing the deposited precursor;
- (d) annealing the pyrolyzed precursor;
- and
- (e) repeating steps (b)-(d) to obtain a desired film thickness, wherein sufficient lead is employed in step (a) to provide a 25-75 mole percent stoichiometric excess of lead, relative to a stoichiometric amount of lead required to react with said other film components for form said perovskite film, wherein the lead acetate comprises lead acetate anhydrous, and
- wherein the lead acetate anhydrous is aged in air for 19 to 24 days.
4 more elements
A method for producing a lead-containing perovskite film comprising the steps of:
- (a) dissolving lead acetate and other film components in a suitable solvent to provide a precursor solution,
- (b) depositing the precursor on a substrate;
- (c) pyrolyzing the deposited precursor;
- (d) annealing the pyrolyzed precursor;
- and
- (e) repeating steps (b)-(d) to obtain a desired film thickness, wherein sufficient lead is employed in step (a) to provide a 25-75 mole percent stoichiometric excess of lead, relative to a stoichiometric amount of lead required to react with said other film components for form said perovskite film,
- further comprising the step of reactive sputtering to deposit the titanium oxide on the silicon dioxide,
- wherein said substrate comprises Pt/TiOx/SiO2/Si,
- wherein thermally stable titanium oxide is employed as an adhesion layer between a platinum electrode and a silicon dioxide layer, and
- wherein the substrate temperature during said reactive sputtering step is 550-750° C.
7 more elements
Dependencies are inferred from the claim text.