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US 9,431,581 B2Granted
Method of attaching a light emitting device to a support substrate
AssigneeKoninklijke Philips N.V.
InventorsDaniel Alexander Steigerwald, Jerome Chandra Bhat, Salman Akram
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Abstract
A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.
Claims16
A method comprising:
- bonding a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a light emitting layer sandwiched between an n-type region and a p-type region, to a wafer of support substrates, each support substrate comprising a body;
- and
- after bonding the wafer of semiconductor light emitting devices to the wafer of support substrates, forming vias extending through the entire thickness of the body of each support substrate;
- wherein said bonding comprises bonding at a temperature less than 300° C., and wherein the at least one bonding layer comprises a first dielectric bonding layer formed on the wafer of semiconductor light emitting devices and a second dielectric bonding layer formed on the wafer of support substrates.
1 more element
A method comprising:
- in a first aligning procedure, aligning a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a light emitting layer sandwiched between an n-type region and a p-type region, with a wafer of support substrates, each support substrate comprising a body;
- bonding the wafer of semiconductor light emitting devices to the wafer of support substrates;
- in a second aligning procedure, aligning an etch mask with metallizations formed on the wafer of semiconductor light emitting devices;
- and
- after bonding the wafer of semiconductor light emitting devices to the wafer of support substrates, forming vias extending through an entire thickness of the body of each support substrate, wherein the vias are defined by the etch mask;
- wherein the first aligning procedure is less precise than the second aligning procedure.
3 more elements
Dependencies are inferred from the claim text.