Method for producing an optoelectronic component, and an optoelectronic component

A method for producing an optoelectronic component, comprising:

• providing a semiconductor layer sequence having at least one active region, wherein the at least one active region emits electromagnetic radiation during operation;
• and
• applying, with an ion assisted application method, at least one layer directly on a first surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm,
• applying, with an ion assisted application method, at least one layer directly on a second surface of the semiconductor layer sequence such that the at least one layer has a peak-to-peak roughness of less than approximately 4 nm, the second surface arranged on a side of the semiconductor layer sequence that is remote from the first surface,
• wherein material applied by the ion assisted application method is one of:
• ionized and accelerated in an electric field towards the semiconductor layer sequence, and
• accelerated by at least one of an ionized gas and an ionized gas beam,
• wherein the second surface comprises a radiation exit area,
• wherein the applying the at least one layer on the first surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,
• wherein the applying the at least one layer on the second surface consists of applying a plurality of layer pairs, each of said layer pairs consisting of a first layer and a second layer,
• wherein each first layer consists of tantalum pentoxide,
• wherein each second layer comprises silicon dioxide,
• wherein each of the first and second layers has a thickness of approximately a quarter of the wavelength of the electromagnetic radiation emitted by the active region of the semiconductor layer sequence, and
• wherein a number of layer pairs on the second surface is less than a number of layer pairs on the first surface.