Semiconductor light emitting structure and semiconductor package structure
AssigneeGenesis Photonics Inc.
InventorsChih-Ling Wu, Yi-Ru Huang, Yu-Yun Lo, Jing-En Huang, Shao-Ying Ting
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Abstract
A semiconductor light emitting structure includes an epitaxial structure, an N-type electrode pad, a P-type electrode pad and an insulation layer. The N-type electrode pad and the P-type electrode pad are disposed on the epitaxial structure apart, wherein the P-type electrode pad has a first upper surface. The insulation layer is disposed on the epitaxial structure and located between the N-type electrode pad and the P-type electrode pad, wherein the insulation layer has a second upper surface. The first upper surface of the P-type electrode pad and the second upper surface of the insulation layer are coplanar.
Claims18
A semiconductor light emitting structure comprising:
- an epitaxial structure;
- a first type electrode pad and a second type electrode pad disposed on the epitaxial structure apart, the second type electrode pad having a first upper surface;
- a height increasing pad disposed on the epitaxial structure and located between the first type electrode pad and the second type electrode pad without directly contacting the first type electrode pad and the second type electrode pad;
- and
- an insulation layer disposed on the epitaxial structure and located between the first type electrode pad and the second type electrode pad, the insulation layer and the height increasing pad being stacked together to form a second upper surface;
- wherein the first upper surface and the second upper surface are coplanar.
A semiconductor light emitting structure comprising:
- an epitaxial structure;
- a first type electrode pad and a second type electrode pad disposed on the epitaxial structure apart;
- a height increasing pad disposed on the epitaxial structure and located between and spaced from the first type electrode pad and the second type electrode pad;
- and
- an insulation layer disposed on the epitaxial structure, the insulation layer and the height increasing pad being stacked together, wherein an upper surface of the height increasing pad is lower than an upper surface of one of the first type electrode pad and the second type electrode pad.
A semiconductor light emitting structure comprising:
- an epitaxial structure;
- a first type electrode pad and a second type electrode pad disposed on the epitaxial structure apart;
- a height increasing pad disposed on the epitaxial structure and located between and spaced from the first type electrode pad and the second type electrode pad;
- and
- an insulation layer disposed on the epitaxial structure, the insulation layer located between the first type electrode pad and the height increasing pad, and located between the second type electrode pad and the height increasing pad.
Dependencies are inferred from the claim text.