Wavelength specific silicon light emitting structure

A method employing a modified e-field silicon light emitting device capable of emitting light at the below threshold wavelength detection range for Silicon of 850 nm,

• wherein the device comprises:
• a first body having four different regions namely a first region of high doping, a second and third region of lower doping, wherein the first region is arranged directly adjacent to the second region, the second region is arranged directly adjacent to the third region, and the third region is arranged directly adjacent to a fourth region,
• first, second, third and fourth terminals for respectively directly electrically connecting the first, second, third and fourth regions of the first body, wherein at least the second and third terminals are in direct contact with their respective second and third regions, each of the four terminals comprising a metal layer through an oxide contact hole,
• wherein a first junction between the first and second regions is configured to be forward biased to inject carriers into the second region,
• wherein a second junction between the second and third regions is configured to be reversed biased into avalanche mode to excite carriers in the third region,
• wherein a third junction between the third and fourth regions is configured to be forward biased to inject carriers into the third region, and
• wherein the third region is configured to be optically transparent to directly emit optical radiation from the third region and away from the device, and
• wherein the method comprises:
• changing a bias voltage between the first and third region to change a wavelength of an optical emission of the device;
• or
• changing a bias voltage on the second electrical terminal to increase an emission intensity of the device.