US 9,431,575 B2Granted

Light-emitting device

AssigneeLG Innotek Co., Ltd.

InventorsDae Seob Han, Yong Tae Moon, Kwang Sun Baek, A Ra Cho

Life of this patent

Estimating the term…

Loading patent…

Abstract

The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer.

Claims20

Dependent claims

A light-emitting device comprising:

a first conductive semiconductor layer;
a gallium nitride-based superlattice layer on the first conductive semiconductor layer;
an active layer on the gallium nitride-based superlattice layer;
a second conductive gallium nitride-based layer on the active layer;
and
a second conductive semiconductor layer on the second conductive gallium nitride-based layer,
wherein the second conductive gallium nitride-based layer comprises a second conductive GaN layer having a first concentration, a second conductive InxAlyGa(1-x-y)N (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlzGa(1-z)N (0<z<1) layer having a third concentration on the active layer, and
wherein the second conductive AlzGa(1-z)N layer having the third concentration comprises:
a primary second conductive AlzGa(1-z)N layer having the third concentration, which has an energy bandgap equal to or higher than an energy bandgap of a quantum wall of the active layer and in which the energy bandgap is gradually decreased from the active layer to the second semiconductor layer;
and
a secondary second conductive AlzGa(1-z)N layer having the third concentration, which has an energy bandgap equal to or higher than an energy bandgap of the quantum wall on the primary second conductive AlzGa(1-z)N layer having the third concentration, and in which the energy bandgap is gradually increased.

8 more elements

A light-emitting device comprising:

a first conductive semiconductor layer;
a gallium nitride-based superlattice layer on the first conductive semiconductor layer;
an active layer on the gallium nitride-based superlattice layer;
a second conductive gallium nitride-based layer on the active layer;
and
a second conductive semiconductor layer on the second conductive gallium nitride-based layer,
wherein the gallium nitride-based superlattice layer has a bandgap energy level which varies from the first conductive semiconductor layer toward the active layer, and
wherein the gallium nitride-based superlattice layer comprises:
a first-group gallium nitride-based superlattice layer having a first bandgap energy;
and
a second-group gallium nitride-based superlattice layer having a second bandgap energy lower than the first bandgap energy on the first-group gallium nitride-based superlattice layer.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/434,383Filed 8 Oct 2013
Priority: KR 10-2012-01118429 Oct 2012
Published: US 2015/0270436 A124 Sep 2015
Granted: 30 Aug 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification8 codes

H10H 20/812
Having quantum effect structures or superlattices, e.g. tunnel junctions: within the light-emitting regions, e.g. having quantum confinement…
H10H 20/811
Bodies: having quantum effect structures or superlattices, e.g. tunnel junctions
H10H 20/8162
Having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures: current-blocking structures
H10H 20/8215
Bodies: characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping