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US 9,431,573 B2Granted
Method and system for generating a photo-response from MoS2 schottky junctions
AssigneeGeorgetown University
InventorsMakarand Paranjape, Paola Barbara, Amy Liu, Marcio Fontana
Life of this patent
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Abstract
Devices incorporating a single to a few-layer MoS2 channels in combination with optimized substrate, dielectric, contact and electrode materials and configurations thereof, exhibit light emission, photoelectric effect, and superconductivity, respectively.
Claims13
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising:
- forming a channel comprising a single-layer of MoS2 on a substrate capped with an insulating layer;
- and
- sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect.
A process for forming a solid-state device including at least one channel capable of exhibiting a photovoltaic effect comprising:
- forming a channel comprising a single-laver of MoS2 on a substrate capped with an insulating layer;
- and
- sputtering a source contact comprised of at least a first material including palladium (Pd) and a drain contact formed of at least a second material including gold (Au) on the substrate and in contact with first and second ends of the channel, wherein Schottky junctions are formed at an interface of at least one of the source and drain contacts and the channel exhibiting a photovoltaic effect, wherein forming the channel comprises exfoliating flakes of MoS2 onto doped silicon (Si).
Dependencies are inferred from the claim text.