Zinc blende cadmium—manganese—telluride with reduced hole compensation effects and methods for forming the same
AssigneeFirst Solar, Inc.
InventorsSergey Barabash, Amir Bayati, Dipankar Pramanik, Zhi-Wen Sun
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Abstract
Embodiments provided herein describe methods for forming cadmium-manganese-telluride (CMT), such as for use in photovoltaic devices. A substrate including a material with a zinc blend crystalline structure is provided. CMT is formed above the substrate. During the formation of the CMT, cation-rich processing conditions are maintained. The resulting CMT may be more readily provided with p-type dopants when compared to conventionally-formed CMT.
Claims14
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises at least one target in the processing chamber, the at least one target including material comprising cadmium, manganese, tellurium, or a combination thereof;
- introducing dimethyl cadmium gas into the processing chamber;
- and
- causing said material to be ejected from the at least one target, the material forming CMT above the substrate.
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- positioning a substrate in a processing chamber of a physical vapor deposition (PVD) tool, wherein the PVD tool further comprises a first target, a second target, and a third target in the processing chamber, wherein the first target includes material comprising cadmium telluride, the second target includes material comprising manganese telluride, and the third target includes a cation-rich material comprising cadmium, manganese, or a combination thereof;
- and
- causing said material to be ejected from the first target, the second target, and the third target, the material forming a cation-rich CMT above the substrate.
A method for forming cadmium-manganese-telluride (CMT), the method comprising:
- forming a first monolayer above a substrate, wherein the first monolayer comprises CMT, and wherein the substrate comprises cadmium telluride in a zinc blend crystal structure;
- forming a second monolayer above the first monolayer, wherein the second monolayer comprises a cation-rich material comprising cadmium or manganese;
- and
- forming a third monolayer above the second monolayer, wherein the third monolayer comprises CMT;
- and
- further comprising forming a layer of CMT above the substrate before the forming of the first monolayer, wherein the forming of the layer of CMT above the substrate is performed using physical vapor deposition (PVD).
Dependencies are inferred from the claim text.