Charge coupled device based on atomically layered van der waals solid state film for opto-electronic memory and image capture
AssigneeWilliam Marsh Rice University
InventorsSidong Lei, Liehui Ge, Antony George, Bo Li, Robert Vajtai, Pulickel M. Ajayan
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Abstract
An opto-electronic sensor may provide one or more layers of atomically layered photo-sensitive materials. The sensor may include a gate electrode layer, a dielectric layer in contact with the gate electrode layer, and a working media layer that is photo-sensitive deposited on the dielectric layer. The working media layer may provide one or more layers of one or more materials where each of the one or more layers is an atomic layer. The sensor may also include side electrodes in contact with the working media layer.
Claims20
An opto-electronic sensor comprising:
- an atomically layered charge coupled device (ALCCD) comprising a matrix of pixels, wherein each pixel comprises
- a gate electrode layer;
- a dielectric layer in contact with the gate electrode layer, wherein the dielectric layer is on top of the gate electrode layer;
- a working media layer that is photo-sensitive positioned on top of the dielectric layer, wherein the working media layer provides one or more layers of one or more materials where each of the one or more layers is an atomic layer;
- and
- side electrodes in contact with the working media layer.
A method for fabricating an opto-electronic sensor, the method comprising:
- forming at an atomically layered charge coupled device (ALCCD) comprising a matrix of pixels, wherein the method for fabricating the matrix of pixels comprises the steps of
- depositing a dielectric layer on top of a substrate;
- forming one or more layers of materials to create a working media layer that is photo-sensitive on top of the dielectric layer, wherein each of the one or more layers is an atomic layer;
- and
- patterning electrodes on the working media layer.
Dependencies are inferred from the claim text.