Photodetector for ultraviolet radiation, having a high sensitivity and a low dark current

A photodetector comprising:

• a carrier substrate;
• an absorber layer made of a first semiconducting material;
• a first electrode structure including a plurality of fingers,
• a second electrode structure including a plurality of fingers, wherein the fingers of the first electrode structure and the fingers of the second electrode structure interlock without touching each other,
• a first contact and a second contact, wherein the first contact is spaced from the second contact,
• wherein the fingers of the first electrode structure and the fingers of the second electrode structure comprise a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers, wherein the cover layer is configured for covering the absorber layer in the region between the fingers and as well as in the region of the fingers, and wherein the electron mobility in the region between the fingers is less than 100 cm2/Vs.