Back to results
US 9,431,554 B2Granted
Semiconductor light trap device
AssigneeInfineon Technologies Dresden GmbH
InventorThoralf Kautzsch
Life of this patent
Estimating the term…
Abstract
Buried structures for silicon devices which alter light paths and thereby form light traps. The lights traps couple more light to a photosensitive surface of the device, rather than reflecting the light or absorbing it more deeply within the device.
Claims8
A device comprising:
- a semiconductor structure having an exposed surface to be exposed to light rays;
- a photoelectrically active portion located beneath the exposed surface within the semiconductor structure;
- and
- an internal structure located beneath the active photoelectrically portion, the internal structure having an interface surface generally parallel to the exposed surface at which total internal reflection of light rays occurs such that at least some the light rays are redirected toward the photoelectrically active portion.
1 more element
Dependencies are inferred from the claim text.