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US 9,431,552 B2Granted
Metallization paste for solar cells
AssigneeStarsource Scientific LLC
InventorsYunjun Li, James P. Novak, Patrick Paul Ferguson, Mohshi Yang
Life of this patent
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Abstract
A metallization paste or ink for making electrical contacts on solar cells has reduced diffusion in a silicon wafer. The paste or ink is configured for printing on a crystalline silicon substrate of a solar cell, wherein the paste comprises silicon particles, aluminum particles, and a paste vehicle. Alternatively, the paste comprises aluminum-silicon alloy particles.
Claims20
A method of generating an interdigitated backside contact solar cell, comprising:
- generating at least one p-doped region and at least one n-doped region at a rear side of a silicon substance;
- depositing a first aluminum-silicon paste on the at least one p-doped region to form a first metallization layer;
- and
- depositing a second aluminum-silicon paste on the at least one n-doped region to form a second metallization layer, wherein each of the first aluminum-silicon paste and the second aluminum-silicon paste consists essentially a mixture of aluminum particles and silicon particles,
- wherein the silicon particles comprising nanoparticles having higher surface area, and are more reactive and having lower melting point than silicon particles of the silicon substance so that the nanoparticles react with the aluminum particles before the aluminum particles react with the silicon particles of the silicon substance, and
- configured to reduce a depth of aluminum diffusion into the silicon substance and forming an aluminum-silicon alloy layer partially extending into the silicon substance.
3 more elements
A method of generating an interdigitated backside contact solar cell, comprising:
- depositing a first aluminum-silicon paste on at least one p-doped region at a rear side of a silicon substance;
- depositing a second aluminum-silicon paste on at least one n-doped region at the rear side of the silicon substance;
- forming a first metallization layer on the at least one p-doped region;
- and
- forming a second metallization layer on the at least one n-doped region, wherein each of the first aluminum-silicon paste and the second aluminum-silicon paste consists essentially a mixture of aluminum particles and silicon particles, wherein the silicon particles comprising nanoparticles having higher surface area, and are more reactive and having lower melting point than silicon particles of the silicon substance so that the nanoparticles react with the aluminum particles before the aluminum particles react with the silicon particles of the silicon substance, and configured to reduce a depth of aluminum diffusion into the silicon substance and forming an aluminum-silicon alloy layer partially extending into the silicon substance.
2 more elements
Dependencies are inferred from the claim text.