Trench polysilicon diode
AssigneeVishay-Siliconix
InventorsQufei Chen, Robert Xu, Kyle Terrill, Deva Pattanayak
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Abstract
Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench.
Claims13
A temperature sensor device comprising:
- a first trench diode electrically coupled to a first pin and a second pin wherein a portion of said first trench diode is under the surface of a N− (P−) type epitaxial region;
- and
- a second trench diode coupled to said first pin and said second pin wherein said first trench diode and said second trench diode are coupled in anti-parallel.
A temperature sensor device comprising:
- a N+ (P+) type substrate;
- a N− (P−) type epitaxial region over said substrate;
- a first and second trenches formed in said N− (P−) type epitaxial region, said trenches comprising a top surface;
- an insulating layer lining said first and second trenches;
- polysilicon filling said first and second trenches forming said top surface of said trenches;
- a P+ (N+) type polysilicon in said first and second trenches and formed by a P+ (N+) type implant;
- a N+ (P+) type polysilicon in said first and second trenches and formed by a N+ (P+) type source implant;
- and
- a first diode formed in said first trench and a second diode formed in said second trench such that a portion of said first and second diodes are formed below said top surface of said trenches.
Dependencies are inferred from the claim text.