Semiconductor device comprising oxide semiconductor material transistor having reduced off current

A semiconductor device comprising:

• a first transistor and a second transistor, each of the first transistor and the second transistor including a channel formation region, a gate, a source, and a drain, the channel formation region comprising an oxide semiconductor material, wherein an off current is less than or equal to 100 zA/μm;
• a first capacitor;
• and
• a second capacitor,
• wherein the gate of the first transistor is electrically connected to one of the source and the drain of the first transistor,
• wherein a first electrode of the first capacitor is electrically connected to the other of the source and the drain of the first transistor,
• wherein the other of the source and the drain of the first transistor is electrically connected to the gate of the second transistor and one of the source and the drain of the second transistor, and
• wherein a first electrode of the second capacitor is electrically connected to the other of the source and the drain of the second transistor.

A semiconductor device comprising:

• a transistor including a channel formation region, a gate, a source, and a drain, the channel formation region comprising an oxide semiconductor material, wherein the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain and an off current is less than or equal to 100 zA/μm;
• and
• a capacitor including a first electrode and a second electrode, wherein the first electrode is electrically connected to the other of the source and the drain of the transistor,
• wherein a concentration of hydrogen contained in the oxide semiconductor material is less than or equal to 5×1019/cm3.