Thin-film semiconductor device for display apparatus and method of manufacturing same

A thin-film semiconductor device comprising:

• a substrate;
• a gate electrode above the substrate;
• a gate insulation film above the gate electrode;
• a channel layer above the gate insulation film, the channel layer having a raised part;
• a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material including a surface active agent and a photosensitizing agent, wherein the organic material includes silicon, oxygen, and carbon as a part of the surface active agent and the photosensitizing agent;
• an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, the interface layer comprising at least carbon and silicon, and the carbon having a higher concentration than a concentration of carbon in the channel protection layer;
• and
• a source electrode and a drain electrode each of which is provided over (a) a top surface and a side surface of a corresponding one of ends of the channel protection layer, (b) a side surface of the interface layer which continues into the side surface of the channel protection layer, (c) a side surface of the raised part of the channel layer which continues into the side surface of the interface layer, and (d) a top surface of the channel layer which continues into the side surface of the raised part of the channel layer,
• wherein the concentration of the carbon included in the interface layer is at least fifty times as much as a concentration of carbon included as impurity in the channel layer.