US 9,431,541 B2 · Semiconductor device

Abstract

To give favorable electrical characteristics to a semiconductor device. To provide a semiconductor device in which a change in electrical characteristics is suppressed. To provide a highly reliable semiconductor device. The semiconductor device includes a first insulating layer; a second insulating layer including an opening portion, over the first insulating layer; a semiconductor layer over the first insulating layer; a source electrode and a drain electrode that are apart from each other in a region overlapping with the semiconductor layer; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first insulating layer includes oxide, and the opening portion of the second insulating layer is positioned inside the semiconductor layer when seen from a top surface side and at least part of the opening portion is provided to overlap with the gate electrode.

Claims24

Dependent claims

A semiconductor device comprising:

a first insulating layer comprising an oxide;
a second insulating layer over the first insulating layer, the second insulating layer including an opening portion;
a semiconductor layer over the first insulating layer and the second insulating layer and in contact with the first insulating layer in the opening portion;
an oxide layer over the semiconductor layer;
a first gate electrode overlapping with the semiconductor layer and the opening portion;
a gate insulating layer between the semiconductor layer and the first gate electrode;
and
source and drain electrodes between the second insulating layer and the gate insulating layer, and electrically connected to the semiconductor layer.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims24