Method for making a semiconductor device with sidewall spacers for confining epitaxial growth
AssigneesSTMicroelectronics S.r.l., Globalfoundries Inc., International Business Machines Corporation
InventorsQing Liu, Ruilong Xie, Xiuyu Cai, Chun-chen Yeh
Life of this patent
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Abstract
A method for making a semiconductor device includes forming laterally spaced-apart semiconductor fins above a substrate. At least one dielectric layer is formed adjacent an end portion of the semiconductor fins and within the space between adjacent semiconductor fins. A pair of sidewall spacers is formed adjacent outermost semiconductor fins at the end portion of the semiconductor fins. The at least one dielectric layer and end portion of the semiconductor fins between the pair of sidewall spacers are removed. Source/drain regions are formed between the pair of sidewall spacers.
Claims21
A method for making a semiconductor device comprising:
- forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;
- forming at least one dielectric layer directly contacting the substrate and adjacent an end portion of the plurality of semiconductor fins and within the space between adjacent semiconductor fins;
- forming a pair of sidewall spacers adjacent outermost semiconductor fins at the end portion of the plurality of semiconductor fins;
- removing the at least one dielectric layer and end portion of the plurality of semiconductor fins between the pair of sidewall spacers;
- and
- forming source/drain regions between the pair of sidewall spacers.
A method for making a semiconductor device comprising:
- forming, above a substrate, a plurality of laterally spaced-apart semiconductor fins;
- forming a first dielectric layer comprising a first dielectric material directly contacting the substrate and adjacent an end portion of the plurality of semiconductor fins;
- forming a second dielectric layer comprising a second dielectric material different than the first dielectric material on the first dielectric layer and with the second dielectric material filling the space between adjacent semiconductor fins;
- forming a pair of sidewall spacers adjacent outermost semiconductor fins at the end portion of the plurality of semiconductor fins;
- removing at least portions of the second dielectric layer and the end portion of the plurality of semiconductor fins between the pair of sidewall spacers;
- and
- epitaxially forming source/drain regions between the pair of sidewall spacers.
A method for making a semiconductor device comprising:
- forming at least one dielectric layer adjacent an end portion of a plurality of spaced apart silicon fins and within the space between adjacent silicon fins, the plurality of semiconductor fins being formed above a substrate and with the at least one dielectric layer directly contacting the substrate;
- forming a pair of sidewall spacers adjacent outermost silicon fins at the end portion of the plurality of silicon fins;
- removing the at least one dielectric layer and end portion of the plurality of silicon fins between the pair of sidewall spacers;
- and
- forming source/drain regions between the pair of sidewall spacers.
Dependencies are inferred from the claim text.