US 9,431,537 B2 · Semiconductor devices and methods of fabricating the same

Abstract

Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active pattern including a lower pattern on the substrate and an upper pattern on the lower pattern. A field insulating layer is formed on the substrate, the sidewalls of the fin-type active pattern, and a portion upper pattern protruding further away from the substrate than a top surface of the field insulating layer. A dummy gate pattern that intersects the fin-type active pattern and that extends in a second direction that is different from the first direction is formed. The methods include forming dummy gate spacers on side walls of the dummy gate pattern, forming recesses in the fin-type active pattern on both sides of the dummy gate pattern and forming source and drain regions on both sides of the dummy gate pattern.

Claims20

Dependent claims

A semiconductor device comprising:

a field insulating layer on a top surface of a substrate and including a trench defined therein that extends in a first direction;
and
a fin-type active pattern extending from the top surface of the substrate and through the trench defined in the field insulating layer, the fin-type active pattern including a first lower pattern that contacts the substrate and a first upper pattern that contacts the first lower pattern and protrudes further from the substrate than the field insulating layer, the first upper pattern comprising a lattice modifying material that is different from the first lower pattern, and the fin-type active pattern including a first fin portion and a second fin portion that is on both sides of the first fin portion in the first direction, and the first lower pattern including a semiconductor material;
and
a first gate electrode intersecting the fin-type active pattern and extending in a second direction that is different from the first direction.

2 more elements

A semiconductor device comprising:

a field insulating layer on a top surface of a substrate and including a trench defined therein that extends in a first direction;
and
a fin-type active pattern extending from the top surface of the substrate and through the trench defined in the field insulating layer, the fin-type active pattern including a first lower pattern that contacts the substrate and a first upper pattern that contacts the first lower pattern and protrudes further from the substrate than the field insulating layer, the first upper pattern comprising a lattice modifying material that is different from the first lower pattern, and the fin-type active pattern including a first fin portion and a second fin portion that is on both sides of the first fin portion in the first direction;
and
a first gate electrode intersecting the fin-type active pattern and extending in a second direction that is different from the first direction,
wherein the fin-type active pattern comprises a first fin-type active pattern, and
wherein the lattice modifying material comprises a first lattice modifying material, the device further comprising:
a second fin-type active pattern extending from the top surface of the substrate and through the trench defined in the field insulating layer, the second fin-type active pattern including a second lower pattern that contacts the substrate and a second upper pattern that contacts the second lower pattern and protrudes further from the substrate than the field insulating layer, the second upper pattern comprising a second lattice modifying material that is different from the second lower pattern and the fin-type active pattern including a third fin portion and a fourth fin portion that is on both sides of the third fin portion in the first direction;
and
a second gate electrode intersecting the second fin-type active pattern and extending in the second direction.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor devices and methods of fabricating the same

Life of this patent

Semiconductor devices and methods of fabricating the same

Life of this patent

Abstract

Claims20