Semiconductor device structure with raised source/drain having cap element
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShing-Huang Wu, Jian-Shian Chen
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor substrate and a source/drain structure adjacent to the gate stack. The semiconductor device structure also includes a cap element over the source/drain structure. The cap element has a top surface and a side surface. A width ratio of the top surface to the side surface of the cap element is in a range from about 0.125 to about 1.
Claims18
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a source/drain structure adjacent to the gate stack;
- and
- a cap element over the source/drain structure, wherein the cap element has a top surface and a side surface, and a width ratio of the top surface to the side surface of the cap element is in a range from about 0.125 to about 1 wherein a surface orientation of the top surface of the cap element is {311}, and a surface orientation of the side surface of the cap element is {111}.
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a source/drain structure adjacent to the gate stack;
- and
- a cap element over the source/drain structure, wherein:
- the cap element has a first thickness substantially equal to a distance between a top surface of the cap element and a top surface of the source/drain structure,
- the cap element has a second thickness substantially equal to a distance between a side surface of the cap element and a side surface the source/drain structure, and
- a ratio of the first thickness to the second thickness is in a range from about 0.8 to about 1.2 wherein a surface orientation of the top surface of the cap element is {311}, and a surface orientation of the side surface of the cap element is {111}.
A semiconductor device structure, comprising:
- a gate stack over a semiconductor substrate;
- a source/drain structure adjacent to the gate stack;
- and
- a cap element over the source/drain structure, wherein the cap element has a first top plane, the source/drain structure has a second top plane, and the first top plane of the cap element is wider than the second top plane of the source/drain structure;
- and
- wherein a surface orientation of a to surface of the cap element is {311}, and a surface orientation of a side surface of the cap element is {111}.
Dependencies are inferred from the claim text.