Semiconductor devices having tensile and/or compressive stress and methods of manufacturing
AssigneeGlobalfoundries Inc.
InventorsThomas W. Dyer, Haining S. Yang
Life of this patent
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Abstract
Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers. The structure further includes an epitaxially grown straining material directly on the polysilicon layer and between portions of the sidewalls. The epitaxially grown straining material, in a relaxed state, strains the polysilicon layer.
Claims17
A semiconductor structure comprising a relaxed, epitaxially grown straining material on a polysilicon layer of a gate stack structure, wherein:
- the straining material is formed on the polysilicon layer in a recess of the gate stack structure;
- the straining material is formed between portions of sidewalls of the gate stack structure located adjacent to the recess;
- and
- the straining material has a lattice constant different than that of the polysilicon layer.
A semiconductor structure comprising:
- a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers;
- and
- a relaxed, epitaxially grown straining material directly on the polysilicon layer in a recess of the gate stack and between portions of the sidewalls located adjacent to the recess,
- wherein the relaxed, epitaxially grown straining material strains the polysilicon layer.
A structure comprising:
- a wafer;
- a gate stack formed on the wafer, the gate stack comprising an oxide layer and a polysilicon layer, which is recessed in relation to sidewall spacers formed on the gate stack;
- and
- a relaxed, epitaxially grown SiGe straining material on the polysilicon layer of the gate stack structure, and in the recess in the gate stack structure, the relaxed, epitaxially grown SiGe straining material being formed between portions of the sidewall spacers adjacent to the recess and extending above the sidewall spacers.
Dependencies are inferred from the claim text.