Asymmetric field effect transistor cap layer
AssigneeGlobalfoundries Inc.
InventorsNicolas L. Breil, Oleg Gluschenkov
Life of this patent
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Abstract
A device includes a field effect transistor on an insulating film. A first fin extends vertically from a top side of a horizontal surface of a semiconductor substrate. An epitaxial cap rests on the first fin, with a left vertex on a left side of the epitaxial cap at a first horizontal distance from a reference line that vertically bisects the first fin, and a right vertex on the right side of the epitaxial cap at a second horizontal distance from the reference line, the first horizontal distance being at least twenty percent greater than the second horizontal distance; and a top vertex is at a third horizontal distance to the left of the reference line.
Claims9
A device comprising:
- a fin field effect transistor (finFET) that includes:
- an insulating film on a horizontal surface of a semiconductor substrate, the insulating film having a top side with a first slope that is substantially parallel to the horizontal surface;
- a first fin that extends vertically from the insulating film, the first fin having a reference line that extends vertically from the top side and that bisects the first fin;
- and
- an epitaxial cap on the fin and made of a first material and having:
- a left vertex on a left side of the epitaxial cap and at a first horizontal distance from the reference line;
- a right vertex on a right side of the epitaxial cap and at a second horizontal distance from the first reference line, wherein the first horizontal distance is at least twenty percent greater than the second horizontal distance;
- and
- a top vertex that is at a third horizontal distance to the left of the reference line, wherein a recessed region of the insulating film has a graded recess profile below the first slope.
Dependencies are inferred from the claim text.