Semiconductor device having drain side contact through buried oxide

A method comprising:

• forming a silicon-on-insulator wafer having a buried oxide layer over a substrate;
• forming a buried n+ region in the substrate below the buried oxide layer;
• forming a p-well, an n-well, and a drift region between the p-well and the n-well in an epitaxial layer of the silicon-on-insulator wafer over the buried oxide layer;
• electrically connecting a source contact to the p-well using a first electrode;
• forming a gate over a portion of the p-well and a portion of the drift region;
• forming an opening through the n-well and the buried oxide layer to expose the buried n+ region;
• depositing a second electrode in the opening;
• and
• electrically connecting a drain contact to the buried n+ region using the second electrode.

A method comprising:

• forming an opening through an n-well and a buried oxide layer of a silicon-on-insulator wafer to expose a buried n+ region of the silicon-on-insulator wafer, the buried n+ region being in a substrate of the silicon-on-insulator below the buried oxide layer;
• electrically connecting a source contact to a p-well of the silicon-on-insulator wafer using a first electrode;
• depositing a second electrode in the opening;
• and
• electrically connecting a drain contact to the buried n+ region using the second electrode.