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US 9,431,529 B2Granted
Confined semi-metal field effect transistor
AssigneeSamsung Electronics Co., Ltd.
InventorsRyan M. Hatcher, Jorge A. Kittl, Robert C. Bowen
Life of this patent
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Abstract
Exemplary embodiments are disclosed for a semi-metal transistor, comprising: a semi-metal contact region adjacent to a metal contact; at least one semiconductor terminal; and a semi-metal transition region connected between the contact region and the semiconductor terminal that transitions from a substantially zero gap semi-metal beginning at an interface of the contact region into a semiconductor with an energy band gap towards the semiconductor terminal.
Claims24
A semi-metal transistor, comprising:
- a semi-metal contact region adjacent to a metal contact;
- at least one semiconductor terminal;
- and
- a semi-metal transition region connected between the semi-metal contact region and the at least one semiconductor terminal, wherein the semi-metal transition region transitions from a substantially zero gap semi-metal beginning at an interface of the semi-metal contact region and the semi-metal transition region into a semiconductor with an energy band gap towards the at least one semiconductor terminal.
1 more element
A method of providing a semi-metal transistor, comprising:
- placing a semi-metal contact region adjacent to a metal contact;
- and
- connecting a semi-metal transition region between the semi-metal contact region and a semiconductor terminal, wherein the semi-metal transition region transitions from a substantially zero gap semi-metal beginning at an interface of the seim-metal contact region and the semi-metal transition region into a semiconductor with an energy band gap towards the semiconductor terminal.
Dependencies are inferred from the claim text.