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US 9,431,528 B2Granted
Lithographic stack excluding SiARC and method of using same
AssigneeGlobalfoundries Inc.
InventorsHong Yu, Xiang Hu, Zhao Lun, Huang Liu
Life of this patent
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Abstract
A lithographic stack over a raised structure (e.g., fin) of a non-planar semiconductor structure, such as a FinFET, includes a bottom layer of spin-on amorphous carbon or spin-on organic planarizing material, a hard mask layer of a nitride and/or an oxide on the spin-on layer, a layer of a developable bottom anti-reflective coating (dBARC) on the hard mask layer, and a top layer of photoresist. The stack is etched to expose and recess the raised structure, and epitaxial structure(s) are grown on the recess.
Claims8
A non-planar semiconductor structure, comprising:
- a semiconductor substrate;
- at least one raised semiconductor structure coupled to the substrate;
- at least one dummy gate structure encompassing an exposed portion of the at least one raised structure;
- a layer of a conformal protective material over the at least one dummy gate structure;
- and
- a lithographic stack over the non-planar structure, wherein the lithographic stack comprises a layer of spin-on material, a hard mask layer above the spin-on layer, a dBARC (developable bottom anti-reflective coating) layer above the hard mask and a layer of lithographic blocking material above the dBARC layer.
3 more elements
A structure, comprising:
- a non-planar semiconductor structure;
- and
- a semiconductor substrate;
- at least one raised semiconductor structure coupled to the substrate;
- at least one dummy gate structure encompassing an exposed portion of the at least one raised structure;
- a layer of a conformal protective material over the at least one dummy gate structure;
- and
- a lithographic stack over the non-planar structure, wherein the lithographic stack comprises a layer of spin-on material, a hard mask layer above the spin-on layer, a dBARC (developable bottom anti-reflective coating) layer above the hard mask and a layer of lithographic blocking material above the dBARC layer.
5 more elements
Dependencies are inferred from the claim text.