IGBT with bidirectional conduction
AssigneeCree, Inc.
InventorsSei-Hyung Ryu, Qingchun Zhang
Life of this patent
Estimating the term…
Abstract
An IGBT device includes a drift region, a collector contact, an injector region, a pair of junction implants, a gate contact, and an emitter contact. The injector region includes a first surface in contact with the collector contact, a second surface opposite the first surface and in contact with the drift region, and at least one bypass region running between the first surface and the second surface. Notably, the at least one bypass region has a charge carrier that is different from that of the injector region. The pair of junction implants is in the drift region along a surface of the drift region opposite the injector region. The gate contact and the emitter contact are on the surface of the drift region opposite the injector region.
Claims10
A method comprising:
- depositing an injector region on a substrate;
- separately depositing at least one bypass region through the injector region, wherein a charge carrier of the bypass region is different than that of the injector region;
- providing a drift region on the injector region opposite the substrate, the drift region comprising silicon carbide;
- providing a pair of junction barrier implants in the drift region opposite the injector region;
- providing a gate contact and an emitter contact on the drift region opposite the injector region.
Dependencies are inferred from the claim text.