Stress memorization technique for strain coupling enhancement in bulk finFET device
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Juntao Li, Chun-Chen Yeh
Life of this patent
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Abstract
A method for forming strained fins includes etching trenches in a bulk substrate to form fins, filling the trenches with a dielectric fill and recessing the dielectric fill into the trenches to form shallow trench isolation regions. The fins are etched above the shallow trench isolation regions to form a staircase fin structure with narrow top portions of the fins. Gate structures are formed over the top portions of the fins. Raised source ad drain regions are epitaxially grown on opposite sides of the gate structure. A pre-morphization implant is performed to generate defects in the substrate to couple strain into the top portions of the fins.
Claims9
A method for forming strained fins, comprising:
- etching trenches in a bulk substrate to form fins;
- filling the trenches with a dielectric fill;
- recessing the dielectric fill into the trenches to form shallow trench isolation regions;
- etching the fins above the shallow trench isolation regions to form a staircase fin structure with narrow top portions of the fins;
- forming gate structures over the top portions of the fins;
- epitaxially growing raised source ad drain regions on opposite sides of the gate structure;
- and
- performing a pre-amorphization implant to generate defects in the substrate to induce strain and to couple the strain into the top portions of the fins.
Dependencies are inferred from the claim text.